From Makers Electronics's description

IRF1407 N-Channel Power MOSFET Transistor TO-220 (130A-75V-7.8mΩ) The IRF1407 N-Channel Power MOSFET in a TO-220 package is an advanced HEXFET power transistor designed for high-efficiency and high-current switching applications. It operates with a breakdown voltage of 75V, making it suitable for handling substantial power levels in various circuits. The MOSFET is particularly valuable in automotive and industrial applications where robust power handling is required, thanks to its ability to manage continuous drain currents of up to 130A. The ultra-low on-resistance of 7.8mΩ enhances its efficiency by minimizing energy loss during operation. This MOSFET utilizes advanced manufacturing processes that optimize its performance in high-speed switching, making it ideal for applications requiring fast and reliable power conversion. Its high thermal tolerance, with a junction temperature rating of up to 175°C, allows it to operate efficiently even in challenging thermal conditions. The TO-220 package facilitates proper heat dissipation, ensuring stable operation under continuous high current. The IRF1407 is designed for use in power management systems, including automotive electrical systems, power supply units, and other high-power applications. Its durability and efficiency make it a go-to solution for engineers seeking reliable and cost-effective power switching. Features: Low on-resistance (7.8mΩ) for improved efficiency. High continuous drain current capacity (130A). Fast switching capability for power conversion. Robust avalanche energy handling. High thermal stability with a 175°C junction temperature. Specifications: Specification Value Model: IRF1407 Voltage (Vds): 75V Continuous Drain Current (Id): 130A On-Resistance (Rds(on)): 7.8mΩ Gate Threshold Voltage (Vgs(th)): 2.0V to 4.0V Total Gate Charge (Qg): 160nC Power Dissipation (Pd): 330W Operating Junction Temperature: 175°C Package: TO-220 Applications: Automotive Electrical Systems. Power Supply Units. Motor Drives. DC-DC Converters. Power Inverters. Related Documents: IRF1407 MOSFET Datasheet

From Micro Ohm's description

IRF1407 N-Channel Power MOSFET Transistor (130A-75V-7.8mΩ) TO-220 High Quality IRF1407 is Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Features:- Advanced process technology Ultra low on-resistance Dynamic dv/dt rating Fast switching Repetitive avalanche allowed up to Tjmax Detailed Specifications:- Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 75V Continuous Drain Current (Id) 130A Drain-Source Resistance (Rds On) 7.8mOhms Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 250 nC Operating Temperature Range -55 – 175°C Power Dissipation (Pd) 330W Related Documents IRF1407 MOSFET Datasheet * Product Images are shown for illustrative purposes only and may differ from actual product.

From Micro Ohm's description

IRF1407 N-Channel Power MOSFET Transistor (130A-75V-7.8mΩ) TO-220 IRF1407 is Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Features:- Advanced process technology Ultra low on-resistance Dynamic dv/dt rating Fast switching Repetitive avalanche allowed up to Tjmax Detailed Specifications:- Number of Channels 1 Channel Transistor Polarity N-Channel Drain-Source Breakdown Voltage (Vds) 75V Continuous Drain Current (Id) 130A Drain-Source Resistance (Rds On) 7.8mOhms Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 250 nC Operating Temperature Range -55 – 175°C Power Dissipation (Pd) 330W Related Documents IRF1407 MOSFET Datasheet * Product Images are shown for illustrative purposes only and may differ from actual product.

From Ampere Electronics's description

IRF1407 N-Channel MOSFET, 130A, 75V, 3-Pin, TO-220 Model: IRF1407 Type: N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) Maximum Continuous Drain Current: 130A Maximum Voltage: 75V Package Type: TO-220 (a common package for power semiconductors) Pin Configuration: 3-Pin Package Includes: 1x IRF1407 MOSFET Documents : IRF1407 MOSFET Datasheet Related Products: Transistors