IRFZ46N N-Channel MOSFET, 53A, 55V, 3-Pin, TO-220

Part number IRFZ46N

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EGP 20 at Makers Electronics

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IRFZ46N N-Channel MOSFET Transistor 53A 55V TO-220
Makers Electronics
checked 14 days ago
EGP 20
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IRFZ46N N-Channel MOSFET, 53A, 55V, 3-Pin, TO-220
Ampere Electronics
checked 22 days ago
EGP 20
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FromMakers ElectronicsAmpere Electronics

From Makers Electronics's description

IRFZ46N N-Channel MOSFET Transistor 53A 55V TO-220 The IRFZ46N is a robust N-Channel power MOSFET designed to function as a highly efficient electronic switch. Engineered using advanced semiconductor technology, its primary role is to control significant power levels with minimal driving effort. This component is characterized by its high input impedance, which allows it to be effectively driven by low-level control signals from microcontrollers or logic circuits. A key aspect of this MOSFET is its focus on efficient power conversion. It is built to minimize energy loss during operation, which is critical for applications demanding high efficiency. The device achieves this through optimized internal construction that supports fast switching transitions, enabling it to rapidly turn on and off to regulate power flow with precision and reduce wasteful heat generation. Beyond basic switching, the IRFZ46N is constructed for durability in demanding electrical environments. It incorporates enhanced ruggedness against voltage transients, as evidenced by its tested avalanche energy capability. This design ensures the transistor can withstand stressful conditions, such as inductive load switching, contributing to the overall reliability and longevity of the end product in which it is installed. Features: Fast switching speed. High input impedance and low level drive. Avalanche energy tested. Improved dv/dt capability, high ruggedness. Specifications: Parameter Symbol Value Unit Condition Drain-Source Voltage: Vdss 60 V Gate-Source Voltage: Vgs ±20 V Continuous Continuous Drain Current: Id 55 A Tc=25°C Drain-Source On-Resistance: Rds(on) 18 (typ) mΩ Vgs=10V, Id=10A Gate Threshold Voltage: Vgs(th) 2.0 – 4.0 V Total Power Dissipation: Pd 140 W Tc=25°C Max. Junction Temperature: Tj 150 °C Total Gate Charge: Qg 35 (typ) nC Vds=48V, Id=50A Thermal Resistance, Junction to Case: Rth(j-c) 0.89 °C/W Pinout Diagram: Applications: High efficiency switch mode power supplies. Power factor correction. Electronic lamp ballast. Package Contents: 1x IRFZ46N N-Channel MOSFET Transistor 53A 55V TO-220 Datasheet

IRFZ46N N-Channel MOSFET, 53A, 55V, 3-Pin, TO-220

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