1N5820 Schottky Diode 3A 20V 475mV@3A DO-201AD

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1N5820 Schottky Diode 3A 20V 475mV@3A DO-201AD The 1N5820 is a preferred power diode that employs the Schottky Barrier principle in a large-area metal-to-silicon construction. It features state-of-the-art geometry, including chrome barrier metal, epitaxial construction with oxide passivation, and metal overlap contact. This series is specifically designed for efficiency in low-voltage and high-frequency environments. ✅Features High Efficiency Fast Switching Mechanical Durability 📜📚Specifications Rating / Characteristic Symbol Value Unit Maximum Ratings Peak Repetitive Reverse Voltage V RRM 20 V Working Peak Reverse Voltage V RWM 20 V DC Blocking Voltage V R 20 V Non-Repetitive Peak Reverse Voltage V RSM 24 V RMS Reverse Voltage V R(RMS) 14 V Average Rectified Forward Current (T L = 95°C) I O 3.0 A Non-Repetitive Peak Surge Current (Half-wave, 60 Hz) I FSM 80 A Operating and Storage Junction Temperature Range T J , T stg -65 to +125 °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Max) R θJA 28 °C/W Electrical Characteristics (T L = 25°C) Maximum Instantaneous Forward Voltage (I F = 1.0 A) V F 0.370 V Maximum Instantaneous Forward Voltage (I F = 3.0 A) V F 0.475 V Maximum Instantaneous Forward Voltage (I F = 9.4 A) V F 0.850 V Maximum Instantaneous Reverse Current (at Rated DC Voltage) I R 2.0 mA Maximum Instantaneous Reverse Current (T L = 100°C) I R 20 mA Mechanical Data Package Type – Axial Lead (DO-201AD) – Weight (Approximate) – 1.1 g 💻Applications Low-voltage, high-frequency inverters Free-wheeling diodes Polarity protection diodes 🎁Package Content 1 x 1N5820 Schottky Diode 3A 20V 475mV@3A DO-201AD 📖DataSheet 1N5820