2SK2275 N-Channel MOSFET Transistor 900V 3.5A TO-220F

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2SK2275 N-Channel MOSFET Transistor 900V 3.5A TO-220F The 2SK2275 N-Channel MOSFET Transistor 900V 3.5A TO-220F is a high-voltage power MOSFET designed for switching and power-conversion applications, offering a 900V drain-source rating, low on-resistance, robust avalanche capability and thermal performance in an isolated TO-220F (MP-45F) style package for reliable heatsinking and industrial use. Features 900V drain-source voltage rating for high-voltage switching applications. Low on-state resistance (R DS(ON) typ=2.2Ω, max=2.8Ω at V GS =10V, ID=2A). Continuous drain current ±3.5A and high pulse capability up to ±14A for short durations. High single-pulse avalanche capability (I AS =3.5A, E AS =22mJ) for inductive load tolerance. Fast switching characteristics with t d(ON) ≈20ns, t r ≈20ns, t d(OFF) ≈90ns and t f ≈20ns. Moderate input capacitance for gate-drive design (C iss ≈1000pF, C oss ≈170pF, C rss ≈60pF). Defined gate charge (Q G ≈42nC, Q GS ≈6.0nC, Q GD ≈20nC) for drive and switching loss calculations. Integrated gate-to-source diode protection; external protection recommended for overvoltage conditions. Low diode forward drop (V F ≈0.9V at I F =3.5A) with reverse-recovery characteristics (t rr ≈480ns, Q rr ≈2.5µC). Specifications ABSOLUTE MAXIMUM RATINGS (T A = 25 °C) Parameter Value Unit Drain-to-Source Voltage V DSS 900 V Gate-to-Source Voltage V GSS ±30 V Drain Current (DC) I D(DC) ±3.5 A Drain Current (pulse) I D(pulse) * ±14 A Total Power Dissipation (T C =25°C) P T1 35 W Total Power Dissipation (T A =25°C) P T2 2.0 W Storage Temperature T stg -55 to +150 °C Channel Temperature T ch 150 °C Single Avalanche Current I AS ** 3.5 A Single Avalanche Energy E AS ** 22 mJ *PW ≤ 10μs, Duty Cycle ≤ 1% **Starting T ch = 25 °C, R G = 25 Ω, V GS = 20 V → 0 Dimensions and PINOUT Applications High-voltage DC-DC converters and switch-mode power supplies. Power amplifiers and switching stages for industrial equipment. Crowbar/protection circuits and surge-resistant switching. Motor-drive front-ends, inverter stages and inductive load switching. General high-voltage switching where robust avalanche tolerance is required. Documents Datasheet