BDW94C PNP Darlington Transistor 12A 100V TO-220

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BDW94C PNP Darlington Transistor 12A 100V TO-220 The BDW94C is a robust silicon power transistor engineered using an Epitaxial-Base PNP process and configured in a monolithic Darlington arrangement. This design integrates two transistors into a single device, resulting in a component capable of delivering very high current gain. It is specifically intended for demanding roles in both power linear amplification and high-speed switching circuits, making it a versatile solution for controlling significant power levels in industrial environments. The transistor is constructed in a monolithic Darlington configuration, which internally pairs two bipolar transistors to multiply the current gain, allowing a small base current to control a much larger collector current. This entire assembly is securely housed in a industry-standard Jedec TO-220 plastic package. This package is renowned for its mechanical durability and excellent thermal performance, facilitating easy mounting to a heat sink to manage the substantial power dissipation during operation. A key feature of its design is the integration of an antiparallel collector-emitter diode within the same monolithic structure. This internal diode provides inherent protection against voltage spikes in inductive load applications. Furthermore, the BDW94C is offered as the direct PNP complement to the BDW93C NPN transistor, which simplifies the design of push-pull output stages and other symmetrical circuits. Features: Monolithic Darlington configuration. Integrated antiparallel collector-emitter diode. Complementary PNP – NPN devices available. STMicroelectronics PREFERRED SALESTYPES. Specifications: Parameter Value Condition Unit Transistor Type: PNP Darlington Collector-Emitter Voltage: -100 IB = 0 V Collector-Base Voltage: -100 IE = 0 V Collector Current: -12 A Peak Collector Current: -15 A Base Current: -0.2 A Total Power Dissipation: 80 Tcase ≤ 25°C W DC Current Gain: 1000 (Min) IC = -5 A, VCE = -4 V Collector-Emitter Saturation Voltage: -2.5 (Max) IC = -10 A, IB = -100 mA V Base-Emitter Saturation Voltage: -2.5 (Max) IC = -10 A, IB = -100 mA V Thermal Resistance, Junction to Case: 1.56 °C/W Operating Junction Temperature: 150 °C Pinout Diagram: Footprint Diagram: Applications: Linear Industrial Equipment. Switching Industrial Equipment. Package Contents: 1x BDW94C PNP Darlington Transistor 12A 100V TO-220 Datasheet