BDX53C NPN Darlington Transistor TO-220

From the shop's description

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features Good hFE linearity High fT frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application Audio amplifiers Linear and switching industrial equipment Specifications Product Attribute Attribute Value Product Category: Darlington Transistors Transistor Polarity: NPN Collector- Emitter Voltage VCEO Max: 100 V Emitter- Base Voltage VEBO: 5 V Collector- Base Voltage VCBO: 100 V Maximum DC Collector Current: 8 A Maximum Collector Cut-off Current: 200 uA Pd – Power Dissipation: 60 W Mounting Style: Through Hole Package / Case: TO-220-3 Maximum Operating Temperature: + 150 C Continuous Collector Current: 8 A DC Collector/Base Gain hfe Min: 750 BDX53C Datasheet