IRFP260 200V 50A 40mΩ@28A,10V 300W MOSFET N-Channel TO-247AC
Part number IRFP260
- Sold by 1 shop · checked today
- 8 similar products, from EGP 60
What the shops say
From Makers Electronics's listing
Description
IRFP260 200V 50A 40mΩ@28A,10V 300W MOSFET N-Channel TO-247AC The IRFP260N is a fifth-generation N-channel HEXFET power MOSFET built with advanced process technology. Its primary function is to efficiently switch or control high levels of current and voltage in power electronics circuits. The core achievement of its design is an extremely low on-resistance per unit of silicon area, which is fundamental to its high-performance operation. This device is engineered not just for efficiency but also for durability in demanding environments. It is characterized by fast switching speeds, which minimize power loss during state transitions. Furthermore, it is fully avalanche rated, meaning it can safely withstand short periods of high voltage stress that exceed its breakdown rating, a key feature for reliability. Its dynamic dv/dt rating ensures robustness against voltage spikes. Housed in the TO-247AC package, this MOSFET is intended for commercial and industrial applications where high power dissipation is required. The package offers an isolated mounting hole, which simplifies heatsink installation and improves electrical isolation. The device is designed for ease of use, featuring simple drive requirements and being suitable for paralleling in circuits that demand even higher current capability. Features: Advanced Process Technology. Dynamic dv/dt Rating. 175°C Operating Temperature. Fast Switching. Fully Avalanche Rated. Ease of Paralleling. Simple Drive Requirements. Pin Configuration: Pin No Pin Name 1 Gate 2 Drain 3 Source Specifications: Physical Case/Package TO-247-3 Mount Through Hole Number of Pins 3 Technical Continuous Drain Current (ID) 50 A Current Rating 50 A Drain to Source Breakdown Voltage 200 V Drain to Source Resistance 40 mΩ Drain to Source Voltage (Vdss) 200 V Dual Supply Voltage 200 V Element Configuration Single Fall Time 48 ns Gate to Source Voltage (Vgs) 20 V Max Junction Temperature (Tj) 175 °C Max Operating Temperature 175 °C Max Power Dissipation 300 W Min Operating Temperature -55 °C Termination Through Hole Footprint Diagram: Applications: Switch Mode Power Supplies (SMPS). Motor Drives and Controls. DC-to-DC Converters. Uninterruptible Power Supplies (UPS). Automotive Systems (Qualified to AEC-Q101). Package Contents: 1x IRFP260 200V 50A 40mΩ@28A,10V 300W MOSFET N-Channel TO-247AC Datasheet
Read moreShow less
Specifications
- Mount
- Through Hole
- Fall Time
- 48 ns
- Termination
- Through Hole
- Case/Package
- TO-247-3
- Current Rating
- 50 A
- Number of Pins
- 3
- Dual Supply Voltage
- 200 V
- Element Configuration
- Single
- Max Power Dissipation
- 300 W
- Max Operating Temperature
- 175 °C
- Min Operating Temperature
- -55 °C
- Drain to Source Resistance
- 40 mΩ
- Gate to Source Voltage (Vgs)
- 20 V
- Continuous Drain Current (ID)
- 50 A
- Max Junction Temperature (Tj)
- 175 °C
- Drain to Source Voltage (Vdss)
- 200 V
- Drain to Source Breakdown Voltage
- 200 V
Datasheets
Similar products
IRF350 N-Channel Power MOSFET Transistor 400V 14A TO-3EGP 601 shopchecked 1 day ago
IRFP360 MOSFET Transistor 400V 23A 200mΩ@14A,10V 280W null TO-247ACEGP 601 shopchecked today
Toshiba 2SA1943 PNP Transistor -15A 230V 3 Pin TO-3PLEGP 601 shopchecked 1 day ago
BTA40-600B TRIAC 600V 40A RD91 InsulatedEGP 601 shopchecked 1 day ago
2SC3281 NPN Power Transistor TO-3PL (200V, 15A)EGP 601 shopchecked 2 days ago
IRF1407 N-Channel Power MOSFET Transistor (130A-75V-7.8mΩ) TO-220 High QualityEGP 601 shopPrice may be out of date (77 days)
2SC5200 NPN Power Transistor 230V 15A TO-3PLEGP 602 shopschecked 3 days ago
FQA30N60 MOSFET Transistor 600V 30A TO-3PEGP 601 shopchecked 21 days ago
