Toshiba K2039 N-Channel MOSFET Transistor 900V 5A TO-3PN

From the shop's description

Toshiba K2039 N-Channel MOSFET Transistor 900V 5A TO-3PN The 2SK2039 N-Channel MOSFET Transistor 900V 5A TO-3PN is a high-voltage, high-power switching MOSFET housed in a rugged TO-3PN metal package. It delivers up to 900 V drain-source voltage tolerance, 5 A continuous drain current at 25 °C case temperature, and 150 W total power dissipation, making it ideal for demanding high-voltage DC-DC converters, switching regulators, and power amplifiers requiring fast switching and rugged electrical performance. Features 900V drain-source voltage rating for high-voltage switching applications. 5A continuous DC drain current capability for sustained loads. High pulse current and power dissipation ratings for surge/short-duration events. Robust TO-3PN metal package for excellent thermal transfer and heatsinking. Wide gate-source voltage tolerance for resilient gate drive (±30V typical maximum). Fast switching characteristics suitable for power converters and regulators. Suitable for use in high-voltage inverters, DC-DC converters, motor drive front-ends, and crowbar/protection circuits. Specifications MAXIMUM RATINGS (T a =25°C) Characteristic Symbol Rating Unit Drain-Source Voltage V DSS 900 V Drain-Gate Voltage (R GS =20kΩ) V DGR 900 V Gate-Source Voltage V GSS ±30 V Drain Current (DC) I D 5 A Drain Current (Pulse) I Dp 15 A Drain Power Dissipation (T C =25°C) P D 150 W Channel Temperature T ch 150 °C Storage Temperature Range T stg -55 to +150 °C Dimensions and PINOUT Applications High-voltage DC-DC converters and switching regulators. Power amplifiers in motor drives or inductive/transformer circuits. Surge-resistant power switches and crowbar protection. High-voltage inverters and rugged control electronics. Package Content 1 x Toshiba K2039 N-Channel MOSFET Transistor 900V 5A TO-3PN Documents Datasheet