STW4N150 N-channel 1500V, 5Ω, 4A, PowerMESH™ Power MOSFET

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Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest R DS(on) per area, unrivalled gate charge and switching characteristics. All Features 100% avalanche tested High speed switching Intrinsic capacitances and Qg minimized Specifications Attribute Value Category Triode/MOS Tube/Transistor/MOSFETs Datasheet STMicroelectronics STW4N150 RoHS Drain Source Voltage (Vdss) 1.5kV Continuous Drain Current (Id) 4A Drain Source On Resistance (RDS(on)@Vgs,Id) 7Ω@10V,2A Power Dissipation (Pd) 160W Gate Threshold Voltage (Vgs(th)@Id) 5V@250uA Type N Channel Input Capacitance (Ciss@Vds) 1300pF@25V Total Gate Charge (Qg@Vgs) 50nC@10V STW4N150 Datasheet