
IRFP250 N-Channel MOSFET 200V 30A TO-247
Part number IRFP250
- Sold by 2 shops · in stock at 2 · EGP 55 – 60.39
- 8 similar products, from EGP 55
Offers
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- IRFP250 N-Channel MOSFET 200V 30A TO-247checked 23 days agoEGP 55
- IRFP250 Power N-Channel MOSFET (200V, 30A)checked 1 day agoEGP 60.39
What the shops say
From Makers Electronics's listing
Description
IRFP250 N-Channel MOSFET 200V 30A TO-247 The IRFP250 N is a discrete N-channel MOSFET in a TO-247-3 package, built for demanding power-switching roles. Its high-voltage silicon die supports a 200 V drain-to-source rating, suitable for bridging low-voltage gate drives to high-voltage bus rails. The insulated mounting hole and metal tab facilitate efficient heat sinking, while the rugged leads ensure reliable mechanical stability in industrial power assemblies. Using advanced trench-gate technology, the IRFP250N achieves a typical on-resistance of just 0.075 Ω at a 10 V gate drive. This low resistance minimizes conduction losses under high currents (30 A continuous at 25 °C) and reduces thermal stress. Its integrated fast-recovery body diode and high dV/dt capability enable clean commutation and high switching speeds, supporting efficient energy transfer in PWM converters. Despite its high-power credentials, the IRFP250N remains easy to integrate. The standard TO-247 footprint—with clearly marked Gate, Drain, and Source pins—works with existing heatsink hardware. A 175 °C maximum junction rating offers thermal headroom, and the robust avalanche energy rating (315 mJ per pulse) protects against inductive transients without external snubbers. Features: 200 V drain-to-source voltage. 30 A continuous drain current at 25 °C (21 A at 100 °C). Low on-resistance of 0.075 Ω at 10 V gate drive. Integrated fast-recovery body diode with 186 ns recovery time. Avalanche energy rating of 315 mJ per pulse. High dV/dt capability (≥ 8.6 V/ns). Junction temperature range from –55 °C to +175 °C. Easy paralleling of multiple devices in power stages. Specifications: Parameter Value Drain-Source Voltage (V DSS): 200 V Continuous Drain Current (ID): 30 A at 25 °C; 21 A at 100 °C Pulsed Drain Current (IDM): 120 A On-Resistance (RDS(on)): 0.075 Ω at VGS = 10 V, ID = 18 A Gate Threshold Voltage (V GS(th)): 2.0–4.0 V (at IG = 250 µA) Total Gate Charge (QG): 123 nC at VDS = 50 V, ID = 18 A Reverse-Recovery Time (trr): 186 ns at IF = 18 A, VGS = 0 V Avalanche Energy (EAS): 315 mJ per pulse Thermal Resistance (RθJC): 0.7 °C/W Package: TO-247-3 Applications: Motor Drive Inverters. Switch-Mode Power Supplies. Uninterruptible Power Supplies. Induction Heating Systems. Welding Equipment. High-Frequency Converters. Package Contents: 1x IRFP250 N-Channel MOSFET TO-247 (30A-200V-0.075Ω). Documents: IRFP250 Datasheet.
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From Most Electronic's listing
Description
The IRFP250 Power N-Channel MOSFET is a semiconductor switching component for switching, amplification and power control circuits. It is a practical choice for your bill of materials or repair part list, and it is stocked at Most Electronics in Cairo with shipping to every governorate. IRFP250 Power N-Channel MOSFET – Key Features • Through-hole or module package as listed • Suitable for switching and amplification • Check the datasheet for pinout and ratings Applications Makers, students and technicians use it in many kinds of projects, for example: • Power switching and motor control • Amplifier and driver stages • Power supply and inverter repair • Student labs and prototyping Usage Tips Check the pinout in the datasheet before soldering, use a heatsink at higher currents and protect inductive loads with a flyback diode. Why Buy from Most Electronics? Most Electronics is an electronics components store in Cairo serving engineers, students, makers and repair shops across Egypt. Every order is checked before it ships, prices are clear, and our team can help you choose compatible parts for your project. • Original and tested stock • Cash on delivery and fast shipping to all governorates • Pickup available from our Cairo branch • Technical support on WhatsApp before and after purchase Ordering, Delivery and Support Ordering from Most Electronics is simple. Add the item to your cart, choose home delivery or pickup from our Cairo branch, and pay cash on delivery or by the available online methods. Orders inside Cairo and Giza usually arrive within one to two working days, and shipments to other governorates normally take two to four working days depending on the courier. Every product is inspected before packing, and sensitive parts are packed in protective bags to prevent damage during shipping. If anything arrives faulty or different from what you ordered, contact our support team on WhatsApp and we will arrange a replacement according to our return policy. Not sure which part fits your project? Send us a message with your circuit or project idea and our engineers will help you choose compatible modules, power supplies, cables and accessories, so you can order everything you need in one go and start building right away. Package Includes 1 piece, as described in the product title and photos. IRFP250 Power N-Channel MOSFET – Frequently Asked Questions Where can I buy it in Egypt? You can order it online from Most Electronics and pay on delivery, or collect it from our store in Cairo. Can I order more than one piece? Yes. Set the quantity you need in the cart; quantity discounts may apply on selected items.
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