IRF9530 P-Channel Power MOSFET Transistor 100V 14A 0.2Ω TO-220

IRF9530 P-Channel Power MOSFET Transistor 100V 14A 0.2Ω TO-220 The IRF9530 P-Channel Power MOSFET Transistor 100V 14A 0.2Ω TO-220 is a high-performance P-channel enhancement-mode MOSFET designed for high-speed switching and efficient power management applications. It features a maximum drain-to-source voltage of -100V, a continuous drain current of 14A, and a low drain-to-source on-resistance of 0.2Ω, making it suitable for medium to high-power switching circuits, DC motor control, battery-powered equipment, power supplies, and load switching applications. The TO-220 package provides excellent thermal performance and allows the device to be mounted directly to a heatsink for improved heat dissipation. Features: Dynamic dV/dt rating 100% avalanche rated Fast switching Ease of paralleling New high voltage benchmark P-Channel Specifications: Parameter Value Part Number IRF9530 Transistor Type P-Channel Power MOSFET Technology Enhancement Mode MOSFET Package TO-220 Mounting Type Through-Hole Drain-to-Source Voltage (VDS) 100V Continuous Drain Current (ID) 14A Pulsed Drain Current (IDM) 56A Drain-to-Source On-Resistance (RDS(on)) 0.2Ω(Max) Gate-to-Source Voltage (VGS) ±20V Gate Threshold Voltage (VGS(th)) 2V to 4V Power Dissipation (PD) 79W Gate Charge (Qg) 58nC(Max) Operating Junction Temperature 55°C to +175°C Package Style TO-220AB Pin Configuration: Applications: High-side power switching. DC motor control. H-Bridge motor drivers. Switching power supplies. Battery management systems. Load switching circuits. Solar power systems. Industrial control equipment. Automotive electronic circuits. Power conversion applications. Package Include: 1x IRF9530 P-Channel Power MOSFET Transistor 100V 14A 0.2Ω TO-220 Documents Datasheet

IRF9530 P-Channel Power MOSFET Transistor IC (TO-220) 100V 14A 0.2Ω IRF9530 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. Features:- • Dynamic dV/dt rating • 100% avalanche rated • Fast switching • Ease of paralleling • New high voltage benchmark • P-Channel • Compliant to RoHS directive 2002/95/EC Detailed Specifications:- Number of Channels 1 Channel Transistor Polarity P-Channel Drain-Source Breakdown Voltage (Vds) -100V Continuous Drain Current (Id) -14A Drain-Source Resistance (Rds On) 0.20Ohms Gate-Source Voltage (Vgs) 20V Gate Charge (Qg) 58 nC Operating Temperature Range -55 – 175°C Power Dissipation (Pd) 79W Related Documents IRF9530 MOSFET Datasheet * Product Images are shown for illustrative purposes only and may differ from actual product.