CLA80E1200HF High-Efficiency Single Thyristor SCR 1200V 80A TO-247

CLA80E1200HF High-Efficiency Single Thyristor SCR 1200V 80A TO-247 The CLA80E1200HF is a high-efficiency single thyristor supplied in an industry-standard TO-247. It is designed for line-frequency operation at 50/60Hz and uses a planar passivated chip for long-term stability. The device provides 1200V repetitive reverse/forward blocking voltage and 1300V non-repetitive blocking voltage. Its current ratings include 80A average forward current with a 180° sine waveform and 126A RMS forward current. The device also supports high surge current capability, with ratings of 900A for 10ms at 50Hz and 970A for 8.3ms at 60Hz under the specified conditions. Features • Single high-efficiency thyristor / SCR • Designed for line-frequency applications, 50/60Hz • Planar passivated chip • Long-term stability • Repetitive blocking voltage: 1200V • Non-repetitive blocking voltage: 1300V • Average forward current: 80A • RMS forward current: 126A • High surge current capability • Backside anode Specification Parameter: Value / Condition Voltage Ratings Repetitive reverse/forward blocking voltage, VRRM / VDRM: 1200 V, Tj = 25°C Non-repetitive reverse/forward blocking voltage, VRSM / VDSM: 1300 V, Tj = 25°C Current Ratings Average forward current, ITAV: 80 A, 180° sine, TC = 115°C RMS forward current, IT(RMS): 126 A RMS current per terminal, package rating: 70 A Surge Current and Fusing Surge forward current, ITSM, Tj = 45°C: 900 A, t = 10 ms, 50 Hz sine; 970 A, t = 8.3 ms, 60 Hz sine; VR = 0 V Surge forward current, ITSM, Tj = 150°C: 765 A, t = 10 ms, 50 Hz sine; 825 A, t = 8.3 ms, 60 Hz sine; VR = 0 V I²t value for fusing, Tj = 45°C: 4.05 kA²s, t = 10 ms; 3.92 kA²s, t = 8.3 ms; VR = 0 V I²t value for fusing, Tj = 150°C: 2.93 kA²s, t = 10 ms; 2.83 kA²s, t = 8.3 ms; VR = 0 V On-State Characteristics Forward voltage drop, VT, Tj = 25°C: 1.40 V max at 80 A; 1.77 V max at 160 A Forward voltage drop, VT, Tj = 125°C: 1.38 V max at 80 A; 1.87 V max at 160 A Threshold voltage, VT0: 0.88 V, Tj = 150°C, for power loss calculation only Slope resistance, rT: 6.3 mΩ, Tj = 150°C, for power loss calculation only Leakage Current Reverse current / drain current, IR / ID: 50 µA max at Tj = 25°C; 5 mA max at Tj = 125°C; V = 1200 V Thermal Ratings Thermal resistance, junction to case, RthJC: 0.2 K/W Thermal resistance, case to heatsink, RthCH: 0.25 K/W Total power dissipation, Ptot: 620 W, TC = 25°C Virtual junction temperature, TVJ: -40 to +150°C Operation temperature, Top: -40 to +125°C Storage temperature, Tstg: -40 to +150°C Gate Ratings Maximum gate power dissipation, PGM: 10 W, t = 30 µs; 5 W, t = 300 µs Average gate power dissipation, PGAV: 0.5 W Gate trigger voltage, VGT: 1.5 V max at Tj = 25°C; 1.6 V max at Tj = -40°C; VD = 6 V Gate trigger current, IGT: 38 mA max at Tj = 25°C; 80 mA max at Tj = -40°C; VD = 6 V Gate non-trigger voltage, VGD: 0.2 V max, Tj = 150°C, VD = 2/3 VDRM Gate non-trigger current, IGD: 5 mA max, Tj = 150°C, VD = 2/3 VDRM Dynamic Ratings Critical rate of rise of voltage, dv/dt: 1000 V/µs, Tj = 150°C, VD = 2/3 VDRM, RGK = ∞, linear voltage rise Repetitive critical rate of rise of current, di/dt: 150 A/µs Non-repetitive critical rate of rise of current, di/dt: 500 A/µs, IT = 80 A Junction capacitance, CJ: 36 pF typ, VR = 400 V, f = 1 MHz, Tj = 25°C Switching and Triggering Latching current, IL: 150 mA max, Tj = 25°C Holding current, IH: 100 mA max, Tj = 25°C Gate controlled delay time, tgd: 2 µs max, Tj = 25°C Turn-off time, tq: 150 µs Applications • Line rectifying 50/60Hz • Soft-start AC motor control • DC motor control • Power converters • AC power control • Lighting control • Temperature control Package Contents • 1x CLA80E1200HF High-Efficiency Single Thyristor SCR 1200V 80A TO-247 Documents CLA80E1200HF