G60N60FUK IGBT Transistor N-Channel 600V 60A TO-3PN

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G60N60FUK IGBT Transistor N-Channel 600V 60A TO-3PN G60N60FUK IGBT Transistor N-Channel 600V 60A TO-3PN Ultra-Fast N-Channel IGBT Power Transistor is a high-performance power switching device designed for industrial, inverter, and motor control applications. Combining the advantages of MOSFET gate drive and bipolar transistor output characteristics, it offers high voltage capability, low conduction losses, and fast switching performance. Rated for 600V and 60A operation, the device is housed in a TO-3PN package for efficient heat dissipation and reliable operation in high-power electronic systems. Features High voltage rating of 600V for demanding power applications. High current handling capability up to 60A. Fast switching performance for improved efficiency. Low conduction losses during operation. Optimized for inverter and motor drive circuits. Robust TO-3PN package with excellent thermal characteristics. High reliability under industrial operating conditions. Low gate drive power requirements. Suitable for high-frequency switching applications. Easy integration into power control systems. Specifications Parameter Details Part Number G60N60FUK Device Type N Channel IGBT Transistor Collector Emitter Voltage (VCES) 600V Collector Current (IC) @ TC=100°C (Continuous) 60A Collector Current (IC) @ TC=25°C (Continuous) 120A Pulsed Collector Current (ICM) 240A Gate Emitter Voltage (VGE) ±30V Power Dissipation (PD) @ TC=25°C 375W Short-Circuit Withstand Time (tSC) 5µs Junction Temperature (TJmax) 175°C Storage Temperature (Tstg) -55°C to 175°C Input Capacitance (Ciss) 3036pF Gate Charge (QG) 137nC Package Type TO-3PN Mounting Type Through Hole Switching Speed Ultra Fast Polarity N Channel Technology IGBT (Insulated Gate Bipolar Transistor) Application Category Power Switching Operating Mode High Efficiency Switching Dimensions Footprint Diagram Pin Configuration Pin Number Pin Name Function / Description 1 Gate (G) Controls the MOSFET conduction 2 Drain (D) Connected to load and positive supply 3 Source (S) Connected to ground or common Applications Photovoltaic inverter power stages. Uninterruptible Power Supplies (UPS). Boost / flyback converters and PFC stages. High-frequency motor drives and traction inverters (medium power). Industrial power electronics and switching modules. Hard-switching or soft-switching converter topologies requiring robust IGBTs. Package Contents 1 x G60N60FUK IGBT Transistor N-Channel 600V 60A TO-3PN Datasheet G60N60FUK