HGTG10N120BND NPT N-Channel IGBT Transistor TO-247 (1200V, 35A)

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Specifications: Product Attribute Attribute Value Product Category: IGBTs Technology: Si Package/Case: TO-247-3 Mounting Style: Through Hole Configuration: Single Collector- Emitter Voltage VCEO Max: 1.2 kV Collector-Emitter Saturation Voltage: 2.45 V Maximum Gate Emitter Voltage: – 20 V, 20 V Continuous Collector Current at 25 C: 35 A Pd – Power Dissipation: 298 W Minimum Operating Temperature: – 55 C Maximum Operating Temperature: + 150 C Series: HGTG10N120BND Continuous Collector Current: 35 A Continuous Collector Current Ic Max: 35 A Gate-Emitter Leakage Current: +/- 250 nA Product Type: IGBT Transistors HGTG10N120BN Datasheet