2N6107 PNP Transistor

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2N6107 PNP Transistor The 2N6107 is a robust silicon PNP transistor housed in a TO-220 style package, engineered for demanding audio and switching roles. Its construction supports substantial collector currents and provides a rugged platform for power stages where both thermal performance and mechanical mounting (through the metal tab) are important. The device’s physical form factor simplifies heat-sinking and chassis mounting, making it practical for medium-power designs. Electrically, the 2N6107 is tuned for high-current operation with design emphasis on maintaining usable gain at elevated currents. It offers a balance between current-handling capability and frequency response suitable for audio output stages and general purpose power switching. The transistor’s ability to sustain notable collector currents while remaining thermally manageable gives designers room to implement effective biasing and protection schemes. In real circuits the 2N6107 behaves as a workhorse: rugged, thermally capable, and tolerant of heavy duty switching or amplifier duties. Its specifications allow it to be used where durability and predictable behavior under load are required particularly in amplifier output stages and medium-power switching assemblies where TO-220 mounting and good heat transfer are beneficial. Features: Silicon PNP transistor in TO-220 package. DC current-gain specified up to IC = 7 A (hFE characterized to 7 A). Collector-Emitter sustaining voltage VCEO(sus) = 70 V (min). High current-gain bandwidth product (fT ≥ 10 MHz at IC = 500 mA). Designed for audio power output and medium-power switching. Specifications: Specification Detail Device: 2N6107 (Silicon PNP, TO-220). Collector-Emitter Sustaining Voltage (VCEO(sus)): 70 V (min). Collector-Emitter Voltage, VCEO (Absolute Max): 70 V. Collector-Base Voltage, VCB (Abs. Max): 80 V. Emitter-Base Voltage, VEB (Abs. Max): 5 V. Continuous Collector Current, IC (Abs. Max): 7 A. Peak Collector Current: 10 A. Base Current, IB (Abs. Max): 3 A. Total Power Dissipation (TC = +25°C): 40 W. Derating Above 25°C: 0.32 W / °C. Operating Junction Temp. Range, TJ: −65 to +150 °C. Storage Temp. Range, Tstg: −65 to +150 °C. Thermal Resistance, Rth(j-c): 3.125 °C / W. DC Current Gain, hFE: IC = 2 A, VCE = 4 V: 30 – 150. IC = 7 A, VCE = 4 V: ≥ 2.3 (min). Collector-Emitter Saturation Voltage, VCE(sat): IC = 7 A, IB = 3 A: ≤ 3.5 V (max). Base-Emitter ON Voltage, VBE(on): IC = 7 A, VCE = 4 V: ≤ 3.0 V (max). Current-Gain Bandwidth Product, fT: ≥ 10 MHz (IC = 500 mA, VCE = 4 V, ftest = 1 MHz). Output Capacitance, Cob: ~250 pF (VCB = 10 V, IE = 0, f = 1 MHz). Collector Cutoff Current, ICEO: VCE = 60 V, IB = 0: ≤ 1.0 mA (max). ICEX: VCE = 80 V, VEB(off) = 1.5 V: ≤ 100 µA (typ). Emitter Cutoff Current, IEBO: VBE = 5 V, IC = 0: ≤ 1.0 mA (max). Applications: Audio Power Output. Medium-Power Switching. General-Purpose Amplifiers. Power Output Stages in Consumer/Industrial Equipment. Package Contents: 1x 2N6107 PNP Transistor Datasheet