BC857BS,115 SMD PNP Bipolar Transistors – BJT 45V 200mW 200@2mA,5V 100mA SOT-363
Part number BC857B
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Description
Manufacturer Nexperia Mfr. Part # BC857BS,115 Package SOT-363 Datasheet Nexperia-BC857BS-115 Description 45V 200mW 200@2mA,5V 100mA PNP SOT-363-6 Bipolar (BJT) ROHS Specifications Attribute Value Category Transistors/Bipolar Transistors – BJT Datasheet Nexperia-BC857BS-115 RoHS Collector Cut-Off Current (Icbo) 15nA Collector-Emitter Breakdown Voltage (Vceo) 45V Power Dissipation (Pd) 200mW Collector Current (Ic) 100mA DC Current Gain (hFE@Ic,Vce) 200@2mA,5V Transition Frequency (fT) 100MHz Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 400mV@100mA,5mA Transistor Type PNP Operating Temperature +150℃@(Tj)
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