IRF150 – 100V N-Channel Hi-Rel MOSFET

From the shop's description

IRF150 HEXFET TRANSISTOR Type Designator: IRF150 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 150 W Maximum Drain-Source Voltage |Vds|: 100 V Maximum Drain Current |Id|: 38 A Maximum Junction Temperature (Tj): 150 °C Drain-Source Capacitance (Cd): 3700 pF Maximum Drain-Source On-State Resistance (Rds): 0.055 Ohm