BUW12A NPN Power Transistor 1000V 8A TO-3PN

BUW12A NPN Power Transistor 1000V 8A TO-3PN The BUW12A is a high-performance Silicon NPN Power Transistor, housed in a standard TO-3PN package. It features high voltage rating capabilities, fast switching speed, and low collector saturation voltage, making it ideally suited for demanding switching and industrial electronic applications. Features High Voltage Capability Fast Switching Speed Low Saturation Voltage Specifications Absolute Maximum Ratings (T a = 25°C) Symbol Parameter Conditions Value Unit V CBO Collector-Base Voltage Open Emitter 1000 V V CEO Collector-Emitter Voltage Open Base 450 V V EBO Emitter-Base Voltage Open Collector 9 V I C Collector Current Continuous 8 A I CM Collector Current (Peak) Peak 20 A I B Base Current Continuous 4 A P T Total Power Dissipation T c = 25°C 125 W T j Junction Temperature — 150 °C T stg Storage Temperature — -65 to 175 °C Thermal Characteristics Symbol Parameter Max Unit R th j-c Thermal Resistance, Junction to Case 1.2 °C/W Electrical Characteristics (T j = 25°C unless specified) Symbol Parameter Conditions Min Max Unit V CEO(SUS) Collector-Emitter Sustaining Voltage I C = 0.1A; I B = 0; L = 25mH 450 — V V CEsat Collector-Emitter Saturation Voltage I C = 6A; I B = 1.2A — 1.5 V V BEsat Base-Emitter Saturation Voltage I C = 6A; I B = 1.2A — 1.5 V I CES Collector Cut-Off Current V CE = 1000V; V BE = 0 — 1.0 mA I EBO Emitter Cut-Off Current V EB = 9V; I C = 0 — 10 mA h FE DC Current Gain V CE = 5V; I C = 1A 15 50 — Switching Times (Resistive Load) Conditions: V CC = 240V, I C = 6A, I B1 = -I B2 = 1.2A Symbol Parameter Max Unit t on Turn-on Time 1.0 µs t s Storage Time 4.0 µs t f Fall Time 0.8 µs Applications Specially intended for operating in industrial applications . Package Content 1 x BUW12A NPN Power Transistor 1000V 8A TO-3PN DataSheet BUW12A