FQA22N60 N-Channel MOSFET Transistor 600V, 22A TO-3PN

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FQA22N60 N-Channel MOSFET Transistor 600V, 22A TO-3PN FQA22N60 N-Channel MOSFET Transistor 600V 22A TO-3PN is a high-voltage power MOSFET designed for efficient switching and power conversion applications. It features a 600V drain-to-source voltage rating, 22A continuous drain current capability, and a TO-3PN through-hole package. The device is suitable for high-power switching circuits where high voltage blocking capability and low conduction losses are required. Features: N-Channel power MOSFET. 600V drain-to-source voltage rating. 22A continuous drain current at Tc=25°C. 66A pulsed drain current. ±30V maximum gate-to-source voltage. 165mΩ maximum drain-source on-state resistance. Specifications: Parameter Value Product Type N-Channel MOSFET Channel Type N-Channel Drain-Source Voltage 600V Continuous Drain Current 22A@Tc=25°C Continuous Drain Current 13.8A@Tc=100°C Pulsed Drain Current 66A Gate-Source Voltage ±30V Drain-Source On-State Resistance 165mΩmax.@11A,10V Typical Drain-Source On-State Resistance 140mΩ@11A,10V Typical Gate Charge 45nC@10V Power Dissipation 205W@Tc=25°C Junction-to-Case Thermal Resistance 0.61°C/W Case-to-Heat-Sink Thermal Resistance 0.24°C/W Operating Temperature -55 to +150°C Storage Temperature -55 to +150°C Avalanche Energy 672mJ Avalanche Current 7.3A MOSFET dv/dt 100V/ns Peak Diode Recovery dv/dt 20V/ns Package TO-3PN Number of Pins 3 Mounting Type Through-Hole Pin Configuration: Applications: Switching power supplies. AC-DC power supplies. Power-factor correction circuits. Solar inverters. Industrial power supplies. High-frequency power converters. Inverter circuits. Server and telecommunications power supplies. FPD TV power supplies. ATX power supplies. General-purpose high-voltage switching circuits. Package Include: 1x FQA22N60 N-Channel MOSFET Transistor 600V, 22A TO-3PN. Datasheet