MUR860G Diode 600V 8A Through Hole TO-220-2

From the shop's description

MUR860G Diode 600V 8A Through Hole TO-220-2 The MUR860G is an ultrafast, 8 A rectifier diode housed in a rugged TO‑220AC package. Designed for high‑frequency switching environments, it features recovery times as short as 50 ns and can withstand repetitive reverse voltages up to 600 V. Its plastic‑molded epoxy body meets UL 94 V‑0 flammability standards, ensuring both electrical safety and mechanical durability. Internally rated to operate at junction temperatures up to 175 °C, the MUR860G maintains low forward voltage drop and minimal leakage current, even under heavy loads. The corrosion‑resistant leads are readily solderable, and the device’s thermal resistance (junction‑to‑case) is 2.0 °C/W, allowing efficient heat transfer when mounted on a heatsink. This combination of thermal robustness and ultrafast switching makes it ideal for modern SMPS topologies. Whether used as a free‑wheeling diode in power converters or as a rectifier in inverters and auxiliary power supplies, the MUR860G delivers reliable performance across a wide voltage and temperature range. Its ESD‑hardened design (Human Body Model > 16 kV) and lead‑free, RoHS‑compliant construction further ensure suitability for automotive and industrial applications requiring stringent quality controls. Features: Ultrafast recovery time: 25 ns / 50 ns. Operating junction temperature up to 175 °C. Epoxy meets UL 94 V‑0 0.125 inches. Low forward voltage drop and low leakage current. Reverse voltage rating up to 600 V. High ESD robustness: Machine Model C (> 400 V), Human Body Model 3B (> 16 kV). Pb‑Free, RoHS‑compliant package. Specifications: Parameter MUR860G Peak Repetitive Reverse Voltage (VRRM): 600 V Average Forward Current (IF(AV)): 8.0 A @ TC=150 °C Peak Repetitive Forward Current (IFM): 16 A Non‑repetitive Surge Current (IFSM): 100 A (single half‑cycle, 60 Hz) Operating & Storage Temperature (TJ, Tstg): –65 °C to +175 °C Thermal Resistance Junction‑to‑Case (RθJC): 2.0 °C/W Thermal Resistance Junction‑to‑Ambient (RθJA): 73 °C/W Maximum Reverse Recovery Time (trr): 35 ns (IF=1 A, dI/dt=50 A/µs) Maximum Instantaneous Forward Voltage (VF): 1.50 V @ IF=8 A, TC=25 °C Applications: Switching power supplies Inverters Free‑wheeling diode roles Package Contents: 1x MUR860G Diode 600V 8A Through Hole TO-220-2 MUR860 Datasheet