IRF640N MOSFET (200V, 18A)

Name: IRF640N MOSFET (200V, 18A)
Brand: Future Electronics Egypt

Part number IRF640N

Brand · Future Electronics Egypt

3 offers in stock at 3 shopsEGP 12 – 20.79

EGP 12 at Future Electronics Egypt

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IRF640N MOSFET (200V, 18A)
Future Electronics Egypt
checked 13 days ago
EGP 12
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IRF640N N-Channel Power MOSFET Transistor 200V 18A 0.15Ω TO-220
Makers Electronics
checked 19 days ago
EGP 18
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IRF640N N-Channel MOSFET (200V, 18A)
Most Electronic
checked 11 days ago
EGP 20.79
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IRF640N N-Channel MOSFET
RAM ElectronicsOut of stock
checked 12 days ago
EGP 18
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FromMakers ElectronicsMost ElectronicFuture Electronics EgyptRAM Electronics

From Makers Electronics's description

IRF640 N-Channel Power MOSFET Transistor 200V 18A 0.15Ω TO-220 The IRF640N is a high-performance N-Channel Power MOSFET from International Rectifier, featuring Fifth Generation HEXFET technology. This transistor is designed to deliver extremely low on-resistance, fast switching speeds, and rugged reliability, making it ideal for a wide range of demanding applications. Encased in a TO-220 package, it offers excellent thermal performance and is easy to mount. With a maximum drain-source voltage of 200V and a continuous drain current of 18A, the IRF640N is perfect for power management in industrial and commercial systems. Features High Voltage Handling : 200 V drain‑to‑source breakdown voltage (V BR DSS). Low On‑Resistance : R DS(on) ≤ 0.15 Ω at V GS =10 V, ID=11 A. High Current Capability : 18 A continuous drain current at T C =25 °C (13 A at 100 °C). Robust Avalanche Rating : Single‑pulse avalanche energy E AS =247 mJ; fully avalanche‑rated design. Fast Switching : Total gate charge Q g =67 nC; turn‑on delay t d(on) =10 ns; turn‑off delay t d(off) =23 ns. High Temperature Operation : Junction temperature range –55 °C to +175 °C. Ease of Paralleling : Simple to parallel multiple devices for higher current requirements. Simple Drive Requirements : Standard gate‑drive levels; no special drive circuitry needed. PINOUT Specifications Parameter Symbol Min Typ Max Units Conditions Absolute Maximum Ratings Drain‑to‑Source Voltage: VDSS – – 200 V VGS=0 V, ID=250 µA Continuous Drain Current (TC=25 °C): ID – – 18 A VGS=10 V Pulsed Drain Current: IDM – – 72 A Power Dissipation (TC=25 °C): PD – – 150 W Gate‑to‑Source Voltage: VGS –20 – +20 V Single‑Pulse Avalanche Energy: EAS – – 247 mJ Thermal Resistances Junction‑to‑Case: RθJC – – 1.0 °C/W Junction‑to‑Ambient (no heat sink): RθJA – – 62 °C/W Electrical Characteristics (TJ=25 °C) Gate Threshold Voltage: VGS(th) 2.0 – 4.0 V VDS=VGS, ID=250 µA Static Drain‑Source On‑Resistance: RDS(on) – – 0.15 Ω VGS=10 V, ID=11 A Forward Transconductance: gfs 6.8 – – S VDS=50 V, ID=11 A Drain‑to‑Source Leakage Current: IDSS – – 250 µA VDS=160 V, VGS=0 V Total Gate Charge: Qg – – 67 nC ID=11 A, VDS=160 V Turn‑On Delay: td(on) – 10 – ns VDD=100 V Turn‑Off Delay: td(off) – 23 – ns RG=2.5 Ω Capacitances Input Capacitance: Ciss – 1160 – pF VGS=0 V, f=1 MHz Output Capacitance: Coss – 185 – pF VDS=25 V Reverse Transfer Capacitance: Crss – 53 – pF f=1 MHz Applications Switch‑Mode Power Supplies (SMPS). DC–DC Converters. Motor Control Drivers. Audio Amplifier Output Stages. Lighting Ballasts and LED Drivers. General High‑Voltage Switching. Documents Datasheet IRF640N CAD Files Altium