IRF640N MOSFET (200V, 18A)

IRF640 N-Channel Power MOSFET Transistor 200V 18A 0.15Ω TO-220 The IRF640N is a high-performance N-Channel Power MOSFET from International Rectifier, featuring Fifth Generation HEXFET technology. This transistor is designed to deliver extremely low on-resistance, fast switching speeds, and rugged reliability, making it ideal for a wide range of demanding applications. Encased in a TO-220 package, it offers excellent thermal performance and is easy to mount. With a maximum drain-source voltage of 200V and a continuous drain current of 18A, the IRF640N is perfect for power management in industrial and commercial systems. Features High Voltage Handling : 200 V drain‑to‑source breakdown voltage (V BR DSS). Low On‑Resistance : R DS(on) ≤ 0.15 Ω at V GS =10 V, ID=11 A. High Current Capability : 18 A continuous drain current at T C =25 °C (13 A at 100 °C). Robust Avalanche Rating : Single‑pulse avalanche energy E AS =247 mJ; fully avalanche‑rated design. Fast Switching : Total gate charge Q g =67 nC; turn‑on delay t d(on) =10 ns; turn‑off delay t d(off) =23 ns. High Temperature Operation : Junction temperature range –55 °C to +175 °C. Ease of Paralleling : Simple to parallel multiple devices for higher current requirements. Simple Drive Requirements : Standard gate‑drive levels; no special drive circuitry needed. PINOUT Specifications Parameter Symbol Min Typ Max Units Conditions Absolute Maximum Ratings Drain‑to‑Source Voltage: VDSS – – 200 V VGS=0 V, ID=250 µA Continuous Drain Current (TC=25 °C): ID – – 18 A VGS=10 V Pulsed Drain Current: IDM – – 72 A Power Dissipation (TC=25 °C): PD – – 150 W Gate‑to‑Source Voltage: VGS –20 – +20 V Single‑Pulse Avalanche Energy: EAS – – 247 mJ Thermal Resistances Junction‑to‑Case: RθJC – – 1.0 °C/W Junction‑to‑Ambient (no heat sink): RθJA – – 62 °C/W Electrical Characteristics (TJ=25 °C) Gate Threshold Voltage: VGS(th) 2.0 – 4.0 V VDS=VGS, ID=250 µA Static Drain‑Source On‑Resistance: RDS(on) – – 0.15 Ω VGS=10 V, ID=11 A Forward Transconductance: gfs 6.8 – – S VDS=50 V, ID=11 A Drain‑to‑Source Leakage Current: IDSS – – 250 µA VDS=160 V, VGS=0 V Total Gate Charge: Qg – – 67 nC ID=11 A, VDS=160 V Turn‑On Delay: td(on) – 10 – ns VDD=100 V Turn‑Off Delay: td(off) – 23 – ns RG=2.5 Ω Capacitances Input Capacitance: Ciss – 1160 – pF VGS=0 V, f=1 MHz Output Capacitance: Coss – 185 – pF VDS=25 V Reverse Transfer Capacitance: Crss – 53 – pF f=1 MHz Applications Switch‑Mode Power Supplies (SMPS). DC–DC Converters. Motor Control Drivers. Audio Amplifier Output Stages. Lighting Ballasts and LED Drivers. General High‑Voltage Switching. Documents Datasheet IRF640N CAD Files Altium

The IRF640N N-Channel MOSFET is a semiconductor switching component for switching, amplification and power control circuits. It is a practical choice for your bill of materials or repair part list, and it is stocked at Most Electronics in Cairo with shipping to every governorate. IRF640N N-Channel MOSFET – Key Features • Through-hole or module package as listed • Suitable for switching and amplification • Check the datasheet for pinout and ratings Applications Makers, students and technicians use it in many kinds of projects, for example: • Power switching and motor control • Amplifier and driver stages • Power supply and inverter repair • Student labs and prototyping Usage Tips Check the pinout in the datasheet before soldering, use a heatsink at higher currents and protect inductive loads with a flyback diode. Why Buy from Most Electronics? Most Electronics is an electronics components store in Cairo serving engineers, students, makers and repair shops across Egypt. Every order is checked before it ships, prices are clear, and our team can help you choose compatible parts for your project. • Original and tested stock • Cash on delivery and fast shipping to all governorates • Pickup available from our Cairo branch • Technical support on WhatsApp before and after purchase Ordering, Delivery and Support Ordering from Most Electronics is simple. Add the item to your cart, choose home delivery or pickup from our Cairo branch, and pay cash on delivery or by the available online methods. Orders inside Cairo and Giza usually arrive within one to two working days, and shipments to other governorates normally take two to four working days depending on the courier. Every product is inspected before packing, and sensitive parts are packed in protective bags to prevent damage during shipping. If anything arrives faulty or different from what you ordered, contact our support team on WhatsApp and we will arrange a replacement according to our return policy. Not sure which part fits your project? Send us a message with your circuit or project idea and our engineers will help you choose compatible modules, power supplies, cables and accessories, so you can order everything you need in one go and start building right away. Package Includes 1 piece, as described in the product title and photos. IRF640N N-Channel MOSFET – Frequently Asked Questions Where can I buy it in Egypt? You can order it online from Most Electronics and pay on delivery, or collect it from our store in Cairo. Can I order more than one piece? Yes. Set the quantity you need in the cart; quantity discounts may apply on selected items.

Power MOSFET, TO-220, 200 V 18 A

V = 200VR DS(on) = 0.18ΩI = 18A