2N7000 N-Channel Small MOSFET Signal 60V, 200mA – Original

The 2N7000 Transistor N-Channel is a semiconductor switching component for switching, amplification and power control circuits. It is a practical choice for your bill of materials or repair part list, and it is stocked at Most Electronics in Cairo with shipping to every governorate. 2N7000 Transistor N-Channel – Key Features • Through-hole or module package as listed • Suitable for switching and amplification • Check the datasheet for pinout and ratings Applications Makers, students and technicians use it in many kinds of projects, for example: • Power switching and motor control • Amplifier and driver stages • Power supply and inverter repair • Student labs and prototyping Usage Tips Check the pinout in the datasheet before soldering, use a heatsink at higher currents and protect inductive loads with a flyback diode. Why Buy from Most Electronics? Most Electronics is an electronics components store in Cairo serving engineers, students, makers and repair shops across Egypt. Every order is checked before it ships, prices are clear, and our team can help you choose compatible parts for your project. • Original and tested stock • Cash on delivery and fast shipping to all governorates • Pickup available from our Cairo branch • Technical support on WhatsApp before and after purchase Ordering, Delivery and Support Ordering from Most Electronics is simple. Add the item to your cart, choose home delivery or pickup from our Cairo branch, and pay cash on delivery or by the available online methods. Orders inside Cairo and Giza usually arrive within one to two working days, and shipments to other governorates normally take two to four working days depending on the courier. Every product is inspected before packing, and sensitive parts are packed in protective bags to prevent damage during shipping. If anything arrives faulty or different from what you ordered, contact our support team on WhatsApp and we will arrange a replacement according to our return policy. Not sure which part fits your project? Send us a message with your circuit or project idea and our engineers will help you choose compatible modules, power supplies, cables and accessories, so you can order everything you need in one go and start building right away. Package Includes 1 piece, as described in the product title and photos. 2N7000 Transistor N-Channel – Frequently Asked Questions Where can I buy it in Egypt? You can order it online from Most Electronics and pay on delivery, or collect it from our store in Cairo. Can I order more than one piece? Yes. Set the quantity you need in the cart; quantity discounts may apply on selected items.

2N7000 N-Channel Small MOSFET Signal 60V, 200mA – Original The 2N7000 is a compact N-channel enhancement-mode MOSFET designed for signal-level switching and low-power control. It uses onsemi’s high-density DMOS cell structure to minimize on-state resistance while keeping package size small. Engineered for predictable gate behavior, it accepts modest gate voltages and is straightforward to drive from logic signals or microcontroller GPIOs, making circuit integration fast and reliable. Optimized for fast switching at low currents, the device delivers consistent performance across a wide temperature range and handles short pulsed currents above its continuous rating. Its low input capacitance and modest gate charge reduce switching losses in small-signal applications. Designers value its clean turn-on and turn-off transitions for avoiding unwanted oscillation in sensitive analog and mixed-signal circuits. Offered in both through-hole (TO-92) and surface-mount (SOT-23) package CASE 135AR, the 2N7000 suits both prototyping and space-constrained production uses. Its combination of ruggedness, simple gate requirements, and low thermal demands makes it ideal for signal-level switching, level shifting, and driver roles in consumer electronics, industrial controls, and hobbyist projects. Its simple handling and robust tolerance simplify assembly and maintenance in varied environments. Features: High density DMOS cell design for low RDS(on). Voltage-controlled small-signal switching behavior. Rugged and reliable construction. High saturation and pulsed current capability. Pb-Free and halogen-free manufacturing. Specifications: Parameter Symbol Value Conditions Unit Absolute Maximum Ratings Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGS ±20 Continuous V Continuous Drain Current ID 200 TC = 25°C mA Pulsed Drain Current IDM 500 mA Maximum Power Dissipation PD 400 TC ≤ 25°C mW Thermal Characteristic Junction-to-Ambient Thermal Resistance RθJA 312.5 °C/W Electrical Characteristics Drain-Source Breakdown Voltage BVDSS 60 min VGS = 0 V, ID = 10 µA V Gate Threshold Voltage VGS(th) 0.8 – 3.0 VDS = VGS, ID = 1 mA V Static Drain-Source On-Resistance RDS(on) 5 max VGS = 10 V, ID = 500 mA Ω Static Drain-Source On-Resistance RDS(on) 5.3 max VGS = 4.5 V, ID = 75 mA Ω Zero Gate Voltage Drain Current IDSS 1 max VDS = 48 V, VGS = 0 V µA Forward Transconductance gfs 100 min VDS = 10 V, ID = 200 mA mS Dynamic Characteristics Input Capacitance Ciss 20 typ VDS = 25 V, VGS = 0 V, f = 1 MHz pF Output Capacitance Coss 11 typ VDS = 25 V, VGS = 0 V, f = 1 MHz pF Reverse Transfer Capacitance Crss 4 typ VDS = 25 V, VGS = 0 V, f = 1 MHz pF Turn-On Time ton 10 max VDD=15V, ID=500mA, RGEN=25Ω ns Turn-Off Time toff 10 max VDD=15V, ID=500mA, RGEN=25Ω ns Pinout Diagram: Footprint Diagram: Applications: Low-Side Switching for Microcontroller Loads. Logic Level Signal Inversion. Driving Small Relays and Solenoids. LED Lighting Control and Dimming. Multiplexing Digital Signals (Analog Switch). Motor Direction Control in H-Bridge Circuits. Protecting Input/Output Pins with Clamp Diodes. Simple Oscillator and Waveform Generator Circuits. Level Shifting Between Different Voltage Domains. Solid-State Relay for Low-Power Applications. Package Contents: 1x 2N7000 N-Channel Small MOSFET Signal 60V, 200mA TO−92 CASE 135AR – Original Datasheet