
BU2527AX NPN Power Transistor 1500V 12A 45W
Part number BU2527AX
From the shop's description
BU2527AX NPN Power Transistor 1500V 12A 45W The BU2527AX is a high-voltage, high-speed switching NPN power transistor encapsulated in a TO-3P(H)IS plastic package. This silicon diffused power transistor is specifically designed for demanding applications, particularly in the horizontal deflection circuits of high-resolution CRT monitors. Its robust design and improved RBSOA (Reverse Bias Safe Operating Area) performance make it a reliable choice for operations up to 64 kHz. Features High Collector-Emitter Sustaining Voltage : With a VCEO(SUS) of 800V minimum, it can handle high voltage requirements. High Switching Speed : Optimized for fast switching, crucial for horizontal deflection circuits. High Reliability : Offers minimal variation between batches, ensuring consistent and dependable performance. Fully Isolated Package : The TO-3P(H)IS package provides electrical isolation. Specifications Parameter Symbol Value Unit Collector-Emitter Voltage (VBE=0) VCES 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base Voltage VEBO 7.5 V Collector Current (Continuous) IC 12 A Collector Current (Peak) ICM 30 A Base Current (Continuous) IB 8 A Base Current (Peak) IBM 12 A Collector Power Dissipation (Tc=25°C) PC 45 W Junction Temperature TJ 150 °C Storage Temperature Range Tstg -55 to 150 °C Thermal Resistance, Junction to Case Rth j-c 2.8 °C/W Electrical Characteristics (Tc=25°C unless otherwise specified) Parameter Symbol Conditions Min Typ Max Unit Collector-Emitter Sustaining Voltage VCEO(SUS) IC=100mA, IB=0, L=25mH 800 – – V Emitter-Base Breakdown Voltage V(BR)EBO IE=1mA, IC=0 7.5 – – V Collector-Emitter Saturation Voltage VCE(sat) IC=6A, IB=1.2A – – 5.0 V Base-Emitter Saturation Voltage VBE(sat) IC=6A, IB=1.2A – – 1.3 V Collector Cutoff Current ICES VCE=1500V, VBE=0 – – 0.25 mA Collector Cutoff Current (TC=125°C) ICES VCE=1500V, VBE=0 – – 2.0 mA Emitter Cutoff Current IEBO VEB=7.5V, IC=0 – – 0.25 mA DC Current Gain hFE-1 IC=1A, VCE=5V 6 – 21 DC Current Gain hFE-2 IC=6A, VCE=5V 5 – 9 Output Capacitance Cob IE=0, VCB=10V, ftest=1MHz – 145 – pF Storage Time tstg Ic=6A, IB(end)=0.55A; LB=0.6µH, -VBB=2V; (-dIB/dt=3.33A/µs) – – 2.0 µs Fall Time tf – – 0.2 µs Applications The primary application for the BU2527AX is in the horizontal deflection circuits of high-resolution monitors and Cathode Ray Tube (CRT) displays.
Read moreShow less
Similar products
IRF630 N-Channel MOSFET, 9A, 200V, 3-Pin TO-220EGP 203 shopschecked 19 days ago
FQPF20N60 20A 600V N-Channel MOSFETEGP 20 – 252 shopschecked 22 days ago
IRF840 N-Channel MOSFET 8A 500V 0.85Ω TO-220ABEGP 20 – 303 shopschecked 19 days ago
IRF3205 high current N-Channel MOSFET TransistorEGP 201 shopPrice may be out of date (74 days)
IRF9530N MOSFET (100V, 12A)EGP 20 – 30.692 shopschecked 11 days ago
FQB60N06 Mosfet C-N 60V 60AEGP 201 shopPrice may be out of date (74 days)
IRF3205 N-Channel Power MOSFET Transistor 55V 110A 8mΩ TO-220 (Original)EGP 20 – 304 shopschecked 11 days ago
IRF830 N-Channel MOSFET, 8A, 500V, 3-Pin TO-220EGP 201 shopchecked 22 days ago