IRF730 N-Channel Power MOSFET Transistor 400V 5.5A TO-220AB

IRF730 N-Channel Power MOSFET Transistor 400V 5.5A TO-220AB

Part number IRF730

2 offers in stock at 2 shopsEGP 16 – 23

EGP 16 at Makers Electronics

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IRF730 N-Channel Power MOSFET Transistor 400V 5.5A TO-220AB
Makers Electronics
checked 21 days ago
EGP 16
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IRF730 N-Channel Power MOSFET 5.5A 400V 1 Ohm
Micro Ohm
Price may be out of date (74 days)
EGP 23
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FromMakers ElectronicsMicro Ohm

From Makers Electronics's description

IRF730 N-Channel MOSFET Transistor 400V 5.5A TO-220AB The IRF730 is a robust N-channel enhancement-mode power MOSFET designed for efficient high-voltage and medium-current switching. It is built using advanced silicon gate technology, which provides fast switching speeds, high input impedance, and low gate drive requirements. This makes it an excellent choice for applications where energy efficiency and thermal performance are critical. Its design prioritizes reliability and durability under demanding operational conditions. Commonly housed in the versatile TO-220 package, the IRF730 offers a good balance of performance and ease of use. The package facilitates easy mounting to a heatsink, which is essential for dissipating the heat generated during operation at higher power levels. Its characteristics make it a fundamental component in the design of switch-mode power supplies (SMPS), DC-DC converters, motor controllers, and other power regulation circuits. Features: Dynamic dV/dt rating. Repetitive avalanche rated. Fast switching. Ease of paralleling. Simple drive requirements. Specifications: Absolute Maximum Ratings (T C = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain–Source Voltage V DS 400 V Gate–Source Voltage V GS ± 20 V Continuous Drain Current (V GS = 10 V) I D 5.5 (at T C =25 °C) 3.5 (at T C =100 °C) A Pulsed Drain Current I DM 22 A Linear Derating Factor — 0.59 W/°C Single‑Pulse Avalanche Energy b E AS 290 mJ Repetitive Avalanche Current a I AR 5.5 A Repetitive Avalanche Energy a E AR 7.4 mJ Maximum Power Dissipation (T C = 25 °C) P D 74 W Peak Diode Recovery dV/dt c dV/dt 4.0 V/ns Operating Junction & Storage Temperature Range T J , T stg –55 to +150 °C Soldering Recommendations (peak temperature, for 10 s) — 300 °C Mounting Torque (6–32 or M3 screw) — 1.1 N·m Notes: a. Repetitive rating; pulse width limited by maximum junction temperature. b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %. c. I SD ≤ 5.5 A, dI/dt ≤ 90 A/μs, V DD ≤ V DS , T J ≤ 150 °C. Dimensions: Pinout: Applications: Switching regulators and high‑voltage DC/DC converters. Motor control drivers and relay/solenoid switching. Uninterruptible power supplies (UPS) and power inverters. Inductive load switching in industrial power systems. Avalanche‑energy absorption in snubberless designs. Packages: 1x IRF730 N‑Channel Power MOSFET 400 V 5.5 A TO‑220AB. Documents: IRF730 Power MOSFET Datasheet . IRF730 CAD files for KiCAD . IRF730 CAD files for Altium Designer . IRF730 CAD files for AutoDesk .