TMS4464-12NL DRAM 64K x 4-bit 120ns IC DIP-18

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TMS4464-12NL DRAM 64K x 4-bit 120ns IC DIP-18 The TMS4464-12NL DRAM 64K x 4-bit 120ns IC DIP-18 is a high-performance dynamic random access memory (DRAM) integrated circuit designed and manufactured by Texas Instruments. This device provides 64K words of memory with a 4-bit data width, optimized for page mode operation to enhance access efficiency. The TMS4464-12NL is built using NMOS technology and is housed in an 18-pin dual inline package suitable for through-hole PCB mounting. Its asynchronous access with a maximum access time of 120ns and common 3-STATE outputs make it compatible with a wide range of legacy microprocessor and digital system designs. Features: High-performance 64K × 4-bit dynamic RAM with page mode architecture. Maximum access time of 120ns for fast data retrieval. 3-STATE outputs support bus sharing and bus-driven applications. Operates from a single +5 VDC power supply range (4.5 V–5.5 V). TTL compatible inputs and outputs simplify interfacing with standard logic families. NMOS technology for stable and reliable dynamic memory performance. Specifications: Parameter Value Memory Organization 64K x 4-bit Total Memory Size 262,144 bits Access Time (RAS) 120ns (max) Access Time (CAS) 60ns (max) Cycle Time (Read/Write) 220ns (min) Cycle Time (Read-Modify-Write) 295ns (min) Refresh Period 4ms (max) Supply Voltage 5VDC ±10% Operating Current (IₒD₁) 65mA (max) Standby Current (IₒD₂) 4.5mA (max) Power Dissipation (Operating) 330mW (max) Power Dissipation (Standby) 25mW (max) Operating Temperature 0°C to +70°C Package Type DIP-18 Pin configuration: Applications: Vintage computing systems and retro electronics. Memory expansion in legacy microcontrollers and processors. Data storage in industrial control equipment. Buffer memory in communication devices. Embedded systems requiring low-power DRAM. Package Include: 1x TMS4464-12NL DRAM 64K x 4-bit 120ns IC DIP-18. Datasheet: TMS4464-12NL