BUH715 NPN Power Transistor 1500V 10A TO-3PML

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BUH715 NPN Power Transistor 1500V 10A TO-3PML The BUH715 is a high-voltage silicon NPN power transistor housed in a TO-3PML package designed for demanding power-switching roles. Its construction emphasizes ruggedness and thermal transfer, letting the semiconductor manage large voltage stress while maintaining structural stability inside the metallized package. The package shape and mounting arrangement facilitate good heat conduction to a heatsink for sustained operation. Electrically, the device is built to withstand elevated collector-base voltages and to tolerate the transient stresses typical of fast switching environments. The internal die and leadframe are optimized for high-voltage insulation and to reduce parasitic inductances, which helps the transistor switch quickly and reproducibly while limiting unwanted oscillations during rapid transitions. Mechanically and thermally, the BUH715 combines robust lead/pin pinning with a case layout that simplifies PCB mounting and heat-sink attachment. The product’s design balances voltage endurance with switching agility, aiming to deliver predictable performance in circuits that require both. Features: High-voltage capability suitable for demanding power roles. Fast switching behavior optimized for transient response. Packaged in a TO-3PML robust power package for improved thermal coupling. Low saturation characteristics under drive conditions (designed for efficient conduction when on). Rugged die and leadframe construction for reliable operation under stress. Specifications: Specification Value Collector-Base Voltage (VCBO): 1500 V Collector-Emitter Voltage (VCEO): 700 V Emitter-Base Voltage (VEBO): 10 V Collector Current (IC): 10 A Collector Current (Pulse) (ICM): 20 A Base Current (IB): 5 A Base Current (Pulse) (IBM): 10 A Total Power Dissipation (Ptot, Tc = 25°C): 57 W Junction Temperature (Tj): 150 °C Storage Temperature (Tstg): −65 to 150 °C Thermal Resistance Junction-to-Case (RθJC): 2.2 °C/W Collector-Emitter Sustaining Voltage VCE(SUS): 700 V Emitter-Base Breakdown Voltage V(BR)EBO: 10 V Collector-Emitter Saturation Voltage VCE(sat): ≤ 1.5 V Base-Emitter Saturation Voltage VBE(sat): ≤ 1.3 V Collector Cut-off Current ICES: ≤ 2 mA Emitter Cut-off Current IEBO: ≤ 100 µA DC Current Gain (hFE): 8 – 16 Storage Time (ts): 2.1 – 3.1 µs Fall Time (tf): 140 – 210 ns Pinout: Applications: Electronic Ballasts for Fluorescent Lighting. Switching Power Supplies (SMPS). Flyback Converter Circuits. Off-Line Battery Chargers. High-Voltage Inverters. Power Factor Correction (PFC) Circuits. Induction Heating Systems. Horizontal Deflection Circuits in CRT Displays. Package Contents: 1x BUH715 NPN Power Transistor 1500V 10A TO-3PML Datasheet