FQA40N60 N-Channel MOSFET Transistor 40A 600V 3-Pin TO-3PN

FQA40N60 N-Channel MOSFET Transistor 40A 600V 3-Pin TO-3PN The FQA40N60 N-Channel MOSFET Transistor 40A 600V 3-Pin TO-3PN is a high-performance N-channel MOSFET designed for high-voltage and high-current applications. this device utilizes advanced planar technology to deliver efficient switching performance and low conduction losses. With a drain-source voltage rating of 600V and a continuous drain current capacity of 40A, the FQA40N60 is well-suited for demanding applications such as power supplies, motor control, and lighting systems. Its TO-3PN package offers excellent thermal performance, making it ideal for use in environments where heat dissipation is critical. Features: High-Speed Switching Enables rapid operation with minimal energy loss. Low Gate Charge Facilitates efficient drive requirements. Low On-Resistance Ensures efficient conduction with minimal power loss. TO-3PN Package Provides robust construction and efficient heat dissipation. Specifications: Drain-Source Breakdown Voltage (VDS): 600V Continuous Drain Current (ID): 40A Gate-Source Voltage (VGS): ±20V Gate Threshold Voltage (VGS(th)): 4.5V Total Gate Charge (Qg): 250nC Power Dissipation (PD): 195W Operating Junction Temperature (TJ): -55°C to +150°C Pin Configuration: Applications: Power supplies Motor controls DC-DC converters Inverters Audio amplifiers Package Include: 1x FQA40N60 N-Channel MOSFET Transistor 40A 600V 3-Pin TO-3PN.

FQA40N60 N-Channel MOSFET, 40 A, 600V, 3-Pin TO-3PN Fairchild Semiconductor?s new QFET? planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET? process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices. Specifications: Attribute Value Channel Type N Maximum Continuous Drain Current 40 A Maximum Drain Source Voltage 250 V Package Type TO-3PN Mounting Type Through Hole Pin Count 3 Maximum Drain Source Resistance 70 m? Channel Mode Enhancement Minimum Gate Threshold Voltage 3V Maximum Power Dissipation 280 W Transistor Configuration Single Maximum Gate Source Voltage -30 V, +30 V Number of Elements per Chip 1 Width 5mm Maximum Operating Temperature +150 ?C Length 15.8mm Transistor Material Si Typical Gate Charge @ Vgs 85 nC @ 10 V Minimum Operating Temperature -55 ?C Height 18.9mm Series QFET Package Includes: 1x FQA40N6 MOSFET Datasheet: FQA40N60 Datasheet Related Products: Transistors