G20N60 C3 N- Channel IGBT transistor (40A, 600V) TO-247

G20N60 C3 N-Channel IGBT transistor 40A, 600V TO-247 The G20N60 C3 N-Channel Insulated Gate Bipolar Transistor (IGBT), in the TO-247 package , belongs to the UFS (Universal Fast Switching) Series. This advanced power switching device is engineered to combine the benefits of MOSFETs (high input impedance) and bipolar transistors (low on-state conduction loss). This hybrid structure results in a component with excellent static and dynamic performance suitable for various power electronics applications. The device is supplied in the robust, through-hole JEDEC Style TO-247 package, which is ideal for high-power circuits requiring efficient heat removal and mechanical stability. Features: 600V Collector to Emitter Voltage (B VCES ) rating. 40A continuous collector current at T C =25°C (based on product title). 600V Switching SOA Capability, ensuring safe operation at high voltages. Low on-state conduction loss, combining benefits of MOSFETs and Bipolar Transistors. Fast switching performance with a typical Fall Time of 108ns at T J =150°C. Integrated Short Circuit Rating, providing protection under fault conditions. Specifications: Parameter Value Collector to Emitter Voltage (B VCES ) 600V Collector Current Continuous (T C =25°C) 40A Collector Current Continuous (T C =110°C) 20A Collector Current Pulsed (I CM ) (Max) 300A Gate to Emitter Voltage Continuous (V GES ) ±20V Total Power Dissipation (P D ) (T C =25°C) 164W Collector to Emitter Saturation Voltage (V CE(SAT) ) (Max, T C =25°C) 1.8V Gate to Emitter Threshold Voltage (V GE(TH) ) (Typ) 4.8V Short Circuit Withstand Time (t sc ) (V GE =10V) 10μs Typical Fall Time (t fl ) (T J =150°C) 108ns Thermal Resistance Junction To Case (R ΘJC ) 0.76°C/W Operating and Storage Junction Temperature Range -55˜150°C Pin Configuration: Applications: AC and DC motor controls in industrial drive systems. High voltage power supplies and switch-mode power conversion stages. Driving high-power inductive loads such as solenoids, relays, and contactors. Inverter and converter circuits operating at moderate switching frequencies. Uninterruptible Power Supplies (UPS) and other power conditioning equipment. Package Include: 1x G20N60 C3 N-Channel IGBT transistor 40A, 600V TO-247 Datasheet: G20N60 C3

G20N60 C3 N- Channel IGBT transistor (40A, 600V) TO-247 G20N60 is a high voltage switching MOS gated device that combines the finest qualities of MOSFETs and bipolar transistors. The component combines a bipolar transistor’s low on-state conduction loss with a MOSFET’s high input impedance to provide the desired effect. Between 25 and 150 degrees Celsius, the significantly lower on-state voltage loss hardly varies slightly. The IGBT is utilized in anti-parallel with the RHRP3060 diode. Many high voltage switching applications running at moderate frequencies and requiring minimal conduction losses are excellent candidates for the IGBT. Features Highly reliable 40A, 600V at TC= 25oC Short Circuit Rated Low Conduction Loss It has high capability to reduce power losses Specification Model G20N60 Type N-Channel IGBT Peak Repetitive Reverse Voltage 600V Package TO-247 Brand name Fairchild Typical fall time 140nS Maximum Power Dissipation 165W Operating and Storage Temperature Range -65 to 175 centigrade Country of Origin China