UT6264CPC-70LL 8K X 8 BIT LOW POWER CMOS SRAM 70ns IC DIP-28 Wide

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UT6264CPC-70LL 8K X 8 BIT LOW POWER CMOS SRAM 70ns IC DIP-28 Wide This memory device is a low-power CMOS static random access memory intended to provide fast, byte-wide read and write access to temporary data storage within digital systems. It presents a simple parallel interface of address, data and control lines so designers can connect it directly to processors, controllers and peripheral logic. Because it is static, stored information is held without refresh as long as device supply conditions are met, allowing straightforward random-access operation. The internal design emphasizes low operating and standby currents and predictable read/write timing to preserve data integrity during normal use and battery-backed standby. Multiple chip-enable inputs allow easy parallel expansion while minimizing bus contention, and three-state data outputs permit shared bus configurations. Inputs and outputs are compatible with common logic levels, simplifying integration with standard digital logic families. Available in a through-hole DIP body, the component is suited to prototyping and small-scale assembly. Its straightforward control scheme and handling requirements reduce board complexity and make it a practical choice for buffering and temporary working memory in embedded and electronic designs. Datasheet provides further timing, electrical and packaging details for design engineers. Features: Low-power CMOS static RAM. Low standby current in LL variants (very small data-retention current). Available speed grade with 70 ns access time option. Single-supply operation. TTL-compatible inputs and outputs. Fully static operation (no refresh required). Three-state outputs for bus sharing. Dual chip-enable inputs for easy memory expansion. Low data-retention voltage capability. Offered in PDIP and SOP outline packages. Specifications: Parameter UT6264CPC-70LL (value from datasheet) Memory type: CMOS Static SRAM Organization: 8K × 8 (65,536-bit) Access time (typ / max): 70 ns (-70 speed grade) Supply voltage (VCC): 4.5 V to 5.5 V Standby current (LL version, typ): ~1 µA (data-retention / standby) Data retention voltage (VDR): 2.0 V (minimum) I/O interface: 8-bit bidirectional, three-state outputs, TTL-compatible Control signals: CE1, CE2, OE, WE (dual chip-enable) Operating temperature: Commercial: 0 °C to +70 °C Package: 28-pin PDIP (600 mil) Pin Configuration: Applications: Microprocessor systems. Battery-backed memory / backup SRAM. Portable and embedded electronics. Communications equipment. Consumer and industrial electronic devices. Package Contents: 1x UT6264CPC-70LL 8K X 8 BIT LOW POWER CMOS SRAM 70ns IC DIP-28 Wide Datasheet