HY6264ALP-10 8K X 8 64k STANDARD SRAM 100ns Interface IC DIP-28 Wide

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HY6264ALP-10 8K X 8 64k STANDARD SRAM 100ns Interface IC DIP-28 Wide The HY6264ALP-10 is a compact static random-access memory device organized as 8,192 words by 8 bits (64K total). Designed as a general-purpose on-board memory element, it serves as a fast, transparent buffer for microcontrollers, processors and control logic. Its internal architecture presents a simple, byte-wide data interface and standard control pins so it can be mapped easily into system address and data buses. In operation the device behaves as ordinary read/write RAM: when selected and enabled it drives data onto the I/O pins for processor reads, and when write conditions are met it accepts data on those same pins. The memory array is arranged for straightforward address decoding and timing, letting designers place it in synchronous or asynchronous memory maps without special glue logic beyond typical chip-select and output-enable signals. The part also supports a data-retention state and is offered in packaging suitable for through-hole mounting (DIP) or surface mounting (SOP), making it flexible for both development boards and production PCBs. Overall, it’s presented as a dependable, easy-to-integrate SRAM building block for systems that need small, fast, byte-wide volatile storage. Features: Fully static operation with tri-state outputs. TTL-compatible inputs and outputs. Low power consumption. Battery backup option for L / LL variants (data retention at low voltage). Standard 28-pin pinout in common PDIP 600 mil. Specifications: Specification Value Memory organization: 8,192 × 8 bits (64K) Technology: CMOS static SRAM Access time / Speed grades: 100 ns Supply voltage (Vcc): 4.5 — 5.5 V (nominal 5.0 V) Input high/low thresholds: VIH ≥ 2.2 V VIL ≤ 0.8 V Operating temperature: 0 °C to 70 °C Operating current: 30 — 50 mA (depending on speed) Standby / data-retention currents: TTL standby ~0.4 mA – 2 mA CMOS standby down to μA range for L/LL parts data-retention at Vcc = 3.0 V: L ~1–50 μA, LL ~1–5 μA Data retention voltage (VDR): 2.0 V (minimum) I/O behavior: 8 bi-directional I/O pins (tri-state outputs) Packages available: 28-pin 600 mil PDIP ESD / reliability: HBM > 2000 V MM > 250 V latch-up > ±100 mA Power dissipation (absolute max): 1.0 W Max output current (IOUT): 50 mA Pin Configuration: Applications: Embedded Microcontroller Systems. Cache Memory for Legacy Processors. Industrial Programmable Logic Controllers (PLCs). Firmware/Code Execution Memory. Data Buffering for Printers and Peripherals. Telecommunications Switching Equipment. Test and Measurement Instruments. Medical Monitoring Devices. Retro Computing and Gaming Systems. General Purpose Memory Expansion. Package Contents: 1x HY6264ALP-10 8K X 8 64k STANDARD SRAM 100ns Interface IC DIP-28 Wide Datasheet