IRF830 N-Channel MOSFET, 8A, 500V, 3-Pin TO-220

IRF830 N-Channel MOSFET, 8A, 500V, 3-Pin TO-220 TYPICAL RDS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources. Package Includes: 1x IRF830 Documents : IRF830 Datasheet Related Products: Transistors