IRF840 N-Channel MOSFET 8A 500V 0.85Ω TO-220AB

IRF840 N-Channel MOSFET 8A 500V 0.85Ω TO-220AB The IRF840 is a robust N-channel power MOSFET presented in a TO-220AB through-hole package. It reads as a purpose-built switching device: compact, solid, and engineered to sit on a heatsink while handling substantial voltages. The package and lead layout give immediate confidence that the part is intended for high-voltage switching tasks where thermal management and mechanical stability matter. Handling the IRF840 in a circuit, you notice it is built for duty – capable of standing off high drain-to-source voltages and switching quickly. The die and package balance ruggedness with reasonably fast transitions, so it feels like a pragmatic choice for designers who need a dependable, conventional MOSFET rather than an ultra-low-RDS(on) logic-level device. On the board, the IRF840 functions as a clear building block for mid-power converters and inverters: it brings predictable switching behavior, a noticeable body diode character, and established thermal performance. Its overall presence suggests a component chosen for reliability and familiarity in power-electronic designs. Features N-Channel Power MOSFET Continuous Drain Current (ID): 8A The gate threshold voltage (VGS-th) is 10V (limit = ±20V) Drain to Source Breakdown Voltage: 500V Drain Source Resistance (RDS) is 0.85 Ohms Rise time and fall time is 23nS and 20nS Available in To-220 package Specifications Specification Value / Notes Part / Package: IRF840 — N-Channel MOSFET, TO-220AB Drain-Source Voltage (VDS): 500 V Gate-Source Voltage (VGS): ±20 V (max) Continuous Drain Current (ID): 8.0 A (TC = 25 °C); 5.1 A (TC = 100 °C) Pulsed Drain Current (IDM): 32 A (pulse) Drain-Source On-Resistance RDS(on): 0.85 Ω (VGS = 10 V, ID = 4.8 A) Gate-Source Threshold VGS(th): 2.0 – 4.0 V (ID = 250 µA) Maximum Power Dissipation (TC = 25 °C): 125 W Single Pulse Avalanche Energy (EAS): 510 mJ Peak Diode dV/dt: 3.5 V/ns Total Gate Charge Qg (VGS = 10 V): Max 63 nC (Qgs 9.3 nC, Qgd 32 nC) Input Capacitance Ciss (f = 1 MHz): ≈ 1300 pF Coss / Crss: ≈ 310 pF / 120 pF Switching (typ.) td(on) / tr / td(off) / tf: 14 ns / 23 ns / 49 ns / 20 ns (test conditions apply) Body diode continuous current / pulsed: 8.0 A / 32 A (pulsed) Body diode reverse recovery trr: Typ 460 ns, Max 970 ns Operating / Storage Temp: TJ: −55 to +150 °C Thermal Resistance RthJC / RthCS: RthJC ≈ 1.0 °C/W ; RthCS ≈ 0.50 °C/W Mounting / Soldering: Mounting torque and solder peak: see datasheet (solder peak 300 °C, 10 s) IRF840 N-Channel Power Mosfet IRF840 Pinout The IRF840 is an N-Channel Power MOSFET that can switch loads up to 500V. The Mosfet could switch loads that consume up to 8A, it can turned on by providing a gate threshold voltage of 10V across the Gate and Source pin. Pin Configuration Pin Number Pin Name Description 1 Source Current flows out through Source (maximum 8A) 2 Gate Controls the biasing of the MOSFET (Threshold voltage 10V) 3 Drain Current flows in through Drain Footprint Diagram Applications Switching high-power devices Inverter Circuits DC-DC Converters Control the speed of motors LED dimmers or flashers High-Speed switching applications Package Contents 1x IRF840 N-Channel MOSFET 8A 500V 0.85Ω TO-220AB IRF840 Datasheet

IRF840 N-Channel Power Mosfet Transistor 8A 500V 0.85Ω TO-220 The IRF840 is an N-Channel Power MOSFET which can switch loads upto 500V. The Mosfet could switch loads that consume upto 8A, it can turned on by providing a gate threshold voltage of 10V across the Gate and Source pin. Pin Configuration Pin Number Pin Name Description 1 Source Current flows out through Source (maximum 8A) 2 Gate Controls the biasing of the MOSFET (Threshold voltage 10V) 3 Drain Current flows in through Drain Features · N-Channel Power MOSFET · Continuous Drain Current (ID): 8A · Gate threshold voltage (VGS-th) is 10V (limit = ±20V) · Drain to Source Breakdown Voltage: 500V · Drain Source Resistance (RDS) is 0.85 Ohms · Rise time and fall time is 23nS and 20nS · Available in To-220 package Note: Complete technical details can be found at the IRF840 datasheet linked at the bottom of the page Alternatives for IRF840 8N50, FTK480, KF12N50 Other N-channel MOSFETS IRF740 , BSS138, IRF520, 2N7002, BS170, BSS123, IRF3205, IRF1010E About IRF840 The IRF840 is an N-Channel Power MOSFET which can switch loads upto 500V. The Mosfet could switch loads that consume upto 8A, it can turned on by providing a gate threshold voltage of 10V across the Gate and Source pin. Since the mosfet is for switching high current high voltage loads it has a relatively high gate voltage, hence cannot be used directly with a I/O pin of a CPU. If you prefer a mosfet with low gate voltage then try IRF540N or 2N7002 etc. One considerable disadvantage of the IRF840 Mosfet is its high on-resistance (RDS) value which is about 0.85 ohms. Hence this mosfet cannot be used in applications where high switching efficiency is required. The Mosfet requires a driver circuit to provide 10V to the gate pin of this Mosfet the simplest driver circuit can be build using a transistor. It is relatively cheap and has very low thermal resistance, added to this the mosfet also has good switching speeds and hence can be used in DC-DC converter circuits. Applications Switching high power devices Inverter Circuits DC-DC Converters Control speed of motors LED dimmers or flashers High Speed switching applications 2D model of the component If you are designing a PCB or Perf board with this component then the following picture from the IRF840 Datasheet will be useful to know its package type and dimensions. Component Datasheet IRF840 Datasheet

IRF840 N-Channel MOSFET, 8A, 500V, 3-Pin TO-220 Attribute Value Channel Type N Maximum Continuous Drain Current 8 A Maximum Drain Source Voltage 500 V Package Type TO-220AB Mounting Type Through Hole Pin Count 3 Maximum Drain Source Resistance 850 m? Channel Mode Enhancement Minimum Gate Threshold Voltage 2V Maximum Power Dissipation 125 W Transistor Configuration Single Maximum Gate Source Voltage -30 V, +30 V Number of Elements per Chip 1 Height 9.01mm Typical Gate Charge @ Vgs 38 nC @ 10 V Minimum Operating Temperature -55 ?C Width 4.7mm Transistor Material Si Length 10.41mm Maximum Operating Temperature +150 ?C Package Includes: 1x IRF840 MOSFET Datasheet: IRF840 Datasheet Related Products: Transistors