BD139 NPN Transistor
Part number BD139
- Sold by 1 shop · checked 76 days ago
- 8 similar products, from EGP 4
Price may be out of date. Last checked 76 days ago. Confirm it on the shop's page.
What the shops say
From Micro Ohm's listing
Description
BD139 Pinout Configuration Pin Number Pin Name Description 1 Emitter Current Drains out through emitter, normally connected to ground 2 Collector Current flows in through collector, normally connected to load 3 Base Controls the biasing of transistor, Used to turn ON or OFF the transistor. Features Plastic casing NPN Transistor Continuous Collector current (IC) is 1.5A Collector-Emitter voltage (VCE) is 80 V Collector-Base voltage (VCB) is 80V Base Current (Ib) is 0.5A Emitter Base Breakdown Voltage (VBE) is 5V DC current gain (hfe) is 40 to 160 Available in To-225 package Note: Complete Technical Details can be found at the BD139 transistor datasheet provided at the bottom of this page. BD139 Equivalent NPN Transistors BD136, BD138, BD140 Alternative to BD139 Transistor D882 Other NPN Transistors TIP31C , SL100, S8050 , BC547 , 2N2222 , 2N4401 BD139 Transistor Overview BD139 is a NPN transistor hence the collector and emitter will be left open (Reverse biased) when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to base pin BD139 has a gain value of 40 to 160, this value determines the amplification capacity of the transistor. The maximum amount of current that could flow through the Collector pin is 1.5A, hence we cannot connect loads that consume more than 1.5A using this transistor. To bias a transistor we have to supply current to base pin, this current (IB) should be limited to 1/10th of the collector current and voltage across the base emitter pin should be 5V maximum. When this transistor is fully biased then it can allow a maximum of 1.5A to flow across the collector and emitter. This stage is called Saturation Region and the typical voltage allowed across the Collector-Emitter (VCE) or Base-Emitter (VBE) could be 80V. When base current is removed the transistor becomes fully off, this stage is called as the Cut-off Region. The BD139 was originally manufactured by Phillips rated at 160MHz for specific audio applications, later they were cloned by other manufacturers like Samsung, ST etc. Where to use BD136 Transistor Being a Medium Power NPN Transistor with a collector current of 1.5A this transistor can be used to control (On/Off) bigger loads that consume less than 1.5A. It also has a very less saturation voltage (Base Emitter Voltage VBE) of only 5V, this makes it easy to use this IC in digital electronics which has an operating voltage of 5V. Another peculiar fact about this transistor is that it comes in plastic package, while most medium power transistor are available only in metal can package. This reduces the cost of the Transistor and also since the package is not conductive it will not be affected by other noise in the circuit. Due to this feature this transistor is widely used in amplifier applications. So if you are looking for a medium power NPN transistor in Plastic package then this Transistor might be the right choice for you. Applications RF Amplifiers Switching circuits Amplification circuits Audio amplifiers Load driver circuits Dimensions (TO-225) Component Datasheet BD139 Transistor Datasheet
Read moreShow less
Similar products
BD679C NPN Darlington Transistor 80V 4A 40W TO-126EGP 4.501 shopchecked 28 days ago
BD139 Transistor (NPN, 80V, 1.5A)EGP 4.50 – 5.902 shopschecked 20 days ago- Dual N-Channel SMD MOSFET Transistor 20V 6A 1.5V @ 250uA 25mΩ @ 5A,10V 2W SOT-23-6 – SC8205SEGP 4.501 shopchecked 14 days ago
FMMT2222 1BZ NPN Switching Transistors SOT-23EGP 4.501 shopchecked 26 days ago
BD135 Transistor (NPN, 45V, 1.5A)EGP 4.25 – 52 shopschecked 20 days ago
MJE13003 Transistor NPN (400V , 1.5A)EGP 4.131 shopchecked 13 days ago
Small signal npn transistorEGP 51 shopPrice may be out of date (76 days)
ULN2004AN Darlington Transistor Arrays 50V 500mA DIP-16EGP 41 shopchecked 14 days ago

