OST75N65HSX IGBT Power Transistor 650V 90A TO-247

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OST75N65HSX IGBT Power Transistor 650V 90A TO-247 The OST75N65HSX is a high-power enhancement-mode N-channel IGBT built for mid-to-high switching frequency power conversion. Engineered with Oriental-Semi’s patented Trident-Gate Bipolar Transistor (TGBT™) structure, the device delivers low saturation voltage and modest gate charge while withstanding a collector-emitter breakdown voltage of 650 V. Packaged in a TO-247 body, it’s designed for robust thermal handling and straightforward mounting in discrete power stages and retrofit modules. Optimized for demanding switching tasks, the OST75N65HSX balances conduction and switching losses to suit inverter and converter topologies. Its low VCE(sat) at high current reduces conduction losses during on-state operation, while the modest total gate charge and controlled switching energies help minimize drive and switching losses. Thermal characteristics and transient ratings support high pulse currents and aggressive switching profiles. The device integrates a fast, soft anti-parallel body diode with defined reverse-recovery behavior, making it tolerant in hard commutation and commutation-assisted topologies. Electrical and dynamic parameters are specified across a wide junction temperature range (up to 175 °C), enabling designers to model thermal budgets and reliability for motor drives, UPS systems, and induction converter applications. Features: Advanced Trident-Gate Bipolar Transistor (TGBT™) technology. Extremely low VCE(sat) and low gate charge for reduced losses. Excellent conduction and switching loss characteristics. Excellent stability and uniformity. Fast and soft anti-parallel body diode with controlled reverse-recovery. Specifications: Parameter Specification Model / Package: OST75N65HSX — TO-247 Collector-Emitter Breakdown Voltage (VCES): 650 V Continuous Collector Current (TC = 25 °C): 90 A Continuous Collector Current (TC = 100 °C): 75 A Pulsed Collector Current (IC, pulse): 300 A VCE(sat): 1.45 V (VGE = 15 V, IC = 75 A) Total Gate Charge (Qg): 206 nC (VGE = 15 V, VCC = 520 V, IC = 75 A) Gate-Emitter Threshold (VGE(th)): 3.0 – 5.0 V (~4.0 V) Diode Forward Voltage (VF): ~1.9 V @ IF = 75 A (Tvj = 25 °C) Diode Reverse Recovery Time (trr): 155 ns (VR = 400 V, IF = 75 A, diF/dt = 500 A/µs) Power Dissipation (TC = 25 °C): 395 W Max. Junction Temperature (Tvj): −55 … +175 °C IGBT Thermal Resistance, junction-to-case (RθJC): 0.38 °C/W Diode Thermal Resistance, junction-to-case (RθJC): 0.75 °C/W Input Capacitance (Cies): 8182 pF (VGE = 0 V, VCE = 25 V, f = 100 kHz) Switching (example): td(on) 56 ns, tr 94 ns, td(off) 288 ns, tf 96 ns (conditions vary) Pinout Diagram: Footprint Diagram: Applications: High-Frequency Switch-Mode Power Supplies. Power Factor Correction Circuits. Solar Microinverters and String Inverters. Industrial Motor Drives and Servo Controllers. Induction Cooking and Heating Systems. Uninterruptible Power Supplies (UPS). Plasma Cutting Equipment. Package Contents: 1x OST75N65HSX IGBT Power Transistor 650V 90A TO-247 Datasheet