SGT40N60FD2 IGBT Transistor 600V 80A 380W TO-247-3L

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SGT40N60FD2 IGBT Transistor 600V 80A 380W TO-247-3L The SGT40N60FD2 IGBT Transistor 600V 80A 380W TO-247-3L is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for power electronics applications requiring high efficiency and low conduction loss. With a collector-emitter breakdown voltage of 600V and a maximum collector current of 80A, it offers outstanding performance for high-power applications. This TO-247-3L package IGBT features fast switching speeds and a low V CE(sat) of 1.8V at 40A, making it ideal for use in welding converters, uninterruptible power supplies (UPS), boost choppers, and air conditioning systems. It also provides a maximum power dissipation of 380W and operates reliably across a wide temperature range of -55°C to 150°C. Features 600V collector-emitter voltage rating. 80A continuous collector current at 25°C. Low V CE(sat) of 1.8V at 40A for efficient operation. Fast switching capability with 88ns rise time. High input impedance for minimal gate drive requirements. Total gate charge of 100nC for rapid switching. Robust TO-247-3L package for effective thermal management. Wide operating temperature range from -55°C to 150°C. Specifications SYMBOL PARAMETER TEST CONDITIONS MIN TYP MAX UNIT BV CE Collector to Emitter Breakdown Voltage V GE = 0V, I C = 100μA 600 V I CES C-E Leakage Current V CE = 600V, V GE = 0V 200 μA I GES G-E Leakage Current V GE = 20V, V CE = 0V ±500 nA V GE(th) G-E Threshold Voltage I C = 250μA, V CE = V GE 4 5 6.5 V V CE(sat) Collector to Emitter Saturation Voltage I C = 40A, V GE = 15V 1.8 2.7 I C = 40A, V GE = 15V, T C = 120°C 2.5 C ies Input Capacitance V CE = 30V, V GE = 0V, f = 1MHz 1850 pF C oes Output Capacitance 190 C res Reverse Transfer Capacitance 50 T d(on) Turn-On Delay Time V CE = 400V, I C = 40A, R g = 10Ω, V GE = 15V, Inductive Load 16 ns T r Rise Time 88 T d(off) Turn-Off Delay Time 110 T f Fall Time 96 E on Turn-On Switching Loss 1.8 mJ E off Turn-Off Switching Loss 0.8 E st Total Switching Loss 2.6 Q g Total Gate Charge V CE = 300V, I C = 40A, V GE = 15V 100 nC Q ge Gate to Emitter Charge 11 Q gc Gate to Collector Charge 52 NOTE: for maximum ratings and further specifications, check the full SGT40N60FD2 datasheet in the documents at the end of this page. Applications Welding converters. Uninterruptible power supplies (UPS). Boost choppers. Air conditioning systems. Induction heating equipment. Switched-mode power supplies (SMPS). Power factor correction (PFC) circuits. Package Contents 1x SGT40N60FD2 IGBT Transistor 600V 80A 380W TO-247-3L. Documents SGT40N60FD2 Datasheet .