YGW60N65F1 IGBT Power Transistor 650V 60A TO-247

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YGW60N65F1 IGBT Power Transistor 650V 60A TO-247 The YGW60N65F1 is a trench field-stop IGBT engineered for medium-power, high-frequency power conversion. Rated for a collector-emitter breakdown of 650 V and continuous current capability suitable for heavy duty applications, it comes in a TO-247 package that eases thermal management and mounting. The device is intended for designers who need a robust discrete IGBT that balances blocking voltage with high current capability while remaining compact. Built using Trench-Stop technology, the YGW60N65F1 emphasizes low conduction losses (low VCE(sat)) and stable switching behavior across temperature. It exhibits a positive temperature coefficient in saturation voltage, simplifying safe paralleling of devices. The part also provides enhanced avalanche capability and specified dynamic parameters (gate charge, capacitances, switching energies) so engineers can accurately budget drive losses and thermal performance in real systems. Switching characteristics are optimized for inductive loads and mid-to-high frequency converters: the device shows short turn-on/turn-off delays and defined switching energies, while its integrated body diode delivers fast, soft recovery for commutation tolerance. Rated for wide junction temperatures (up to 175 °C), the YGW60N65F1 is suited to UPS, inverter, welding converter and PFC designs where reliability and thermal robustness are required. Features: High breakdown voltage: 650 V. Trench-Stop technology for high speed switching and ruggedness. Low VCE(sat) for reduced conduction losses. Positive temperature coefficient in VCE(sat) easy paralleling. Enhanced avalanche capability. Defined switching energies and short-circuit/turn-off robustness for converter use. Specifications: Parameter Specification Model / Package: YGW60N65F1A2 – TO-247 Collector-Emitter Breakdown Voltage (BVCES): 650 V DC Collector Current (limited by Tjmax): TC = 25 °C: 120 A TC = 100 °C: 60 A Pulsed Collector Current (ICM): 180 A (VGE = 15 V, tp limited by Tjmax) VCE(sat): 1.85 V (IC = 60 A, VGE = 15 V, Tj = 25 °C) 2.55 V at Tj = 175 °C Power Dissipation (Tj = 25 °C): 312 W Operating Junction Temperature (Tj): −40 … +175 °C IGBT Rθ(j-c): 0.48 K/W Diode Rθ(j-c): 1.1 K/W Thermal Resistance, junction-ambient (Rθj-a): 40 K/W Gate-Emitter Voltage (continuous / transient): ±20 V continuous ±30 V transient Gate Charge (QG): 158 nC (VCC = 520 V, IC = 60 A, VGE = 15 V) Input Capacitance (Cies): ≈ 3800 pF (VCE = 30 V, f = 1 MHz) Switching times (inductive load, Tj = 25 °C): td(on) 56 ns, tr 79 ns td(off) 165 ns, tf 81 ns Turn-on / Turn-off energy (example, VCC = 400 V, IC = 60 A): Eon 2.2 mJ Eoff 0.89 mJ Diode forward voltage (VFM): ~1.8 V @ IF = 40 A Diode reverse recovery time (Trr): ~90 ns (IF = 60 A, VR = 400 V, di/dt = 400 A/µs) Safe operating / Turn-off SOA: Turn-off SOA: VCE ≤ 650 V, Tj ≤ 175 °C; 180 A rating Mounting torque (M3): 0.6 Nm Soldering temperature (wave): 260 °C (1.6 mm from case, 10 s) Pinout Diagram: Footprint Diagram: Applications: Uninterruptible Power Supplies. Inverter. Welding Converters. Power Factor Correction (PFC) applications. Converters with high switching frequency. Package Contents: 1x YGW60N65F1 IGBT Power Transistor 650V 60A TO-247 Datasheet