FGA25N120ANTD NPT IGBT Transistor 1200V 25A TO-3P

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FGA25N120ANTD NPT IGBT Transistor 1200V 25A TO-3P The FGA25N120ANTD is a 1200 V NPT trench IGBT in a TO-3P package engineered for demanding high-voltage power switching. Fairchild’s proprietary NPT trench design emphasizes low on-state voltage and strong conduction characteristics, providing efficient current handling and stable temperature behavior across heavy loads. Built for ruggedness, the device blends conduction performance with thermal resilience to suit aggressive power stages where reliability under stress is critical. Internally optimized gate structures and careful cell design reduce switching energy and control dynamic losses, making the IGBT attractive for moderate-frequency converters. The transistor exhibits controlled gate charge and predictable turn-on/turn-off behavior that simplify gate drive design and mitigate switching transients. Enhanced avalanche capability and a robust integral diode with managed reverse recovery further protect the module during fault or resonant events, improving survivability in real systems. Rated for industrial applications, the FGA25N120ANTD is particularly well suited to resonant or soft-switching topologies such as induction heating, microwave generators and similar power supplies. Its TO-3P package offers strong thermal coupling to heatsinks, easing thermal management in compact assemblies. The device balances low conduction drop, controlled switching losses and ruggedness for dependable performance in high-energy power conversion designs. Features: NPT Trench Technology with positive temperature coefficient. Low saturation voltage (low VCE(sat) for efficient conduction). Low switching loss (notably low Eoff). Extremely enhanced avalanche capability (ruggedness). Specifications: Specification Details Device Type: NPT Trench IGBT Package: TO-3P Collector-Emitter Voltage (VCES): 1200 V Gate-Emitter Voltage (VGES): ±20 V Continuous Collector Current (IC): 50 A @ TC = 25 °C Continuous Collector Current (IC): 25 A @ TC = 100 °C Pulsed Collector Current (ICM): 75 A Diode Forward Current (IF): 25 A @ TC = 100 °C Diode Peak Forward Current (IFM): 150 A Maximum Power Dissipation: 312 W @ TC = 25 °C Maximum Power Dissipation: 125 W @ TC = 100 °C Collector-Emitter Saturation Voltage: Typ. 2.0 V @ IC = 25 A, VGE = 15 V Gate Threshold Voltage (VGE(th)): 3.5 – 7.5 V Switching Energy (Eon): Typ. 4.1 mJ Switching Energy (Eoff): Typ. 0.96 mJ Total Gate Charge (Qg): Typ. 200 nC Input Capacitance (Cies): Typ. 3700 pF Output Capacitance (Coes): Typ. 130 pF Reverse Transfer Capacitance (Cres): Typ. 80 pF Diode Forward Voltage (VFM): Typ. 2.0 V @ IF = 25 A Diode Reverse Recovery Time (trr): Typ. 235 ns Thermal Resistance Junction-to-Case (RθJC): 0.4 °C/W Operating Junction Temperature: −55 °C to +150 °C Storage Temperature: −55 °C to +150 °C Pin Configuration: Pin Number Pin Name Description 1 Gate Controls the biasing of the IGBT 2 Collector Current flows in through Source 3 Emitter Current flows out through Emitter Applications: High Voltage, high current switching devise Induction Heating Microwave Oven Large Solenoids Tesla Coils Converters or Inverter circuits Package Include: 1x FGA25N120ANTD NPT IGBT Transistor 1200V 25A TO-3P Datasheet