HYB41256-12 NMOS 256k x 1-Bit DRAM Memory IC Page Mode DIP-16

From the shop's description

HYB41256-12 NMOS 256k x 1-Bit DRAM Memory IC Page Mode DIP-16 HYB41256-12 NMOS 256K x 1-Bit DRAM Memory IC Page Mode DIP-16 is a high-performance NMOS dynamic random-access memory organized as 262,144 × 1-bit. Designed for single 5V operation, it features page mode capability for faster sequential memory access by keeping the selected row active while changing only the column address. The device supports read, write, read-modify-write, hidden refresh, and RAS-only refresh operations, making it suitable for memory expansion, embedded systems, industrial equipment, and legacy computer hardware requiring reliable 256K-bit DRAM storage. Specifications are based on the uploaded datasheet. Features 256K × 1-bit dynamic RAM organization. High-speed 120ns maximum access time. Supports Page Mode operation for faster sequential memory access. Single 5V power supply operation. Standard DIP-16 through-hole package. TTL-compatible input and output levels. Supports Read, Write, and Read-Modify-Write operations. Supports Hidden Refresh and RAS-only Refresh modes. Multiplexed address inputs reduce package pin count. Reliable NMOS memory technology. Suitable for legacy computer and industrial applications. Low standby power consumption. Specifications Parameter Details Product Type NMOS Page Mode DRAM Memory IC Part Number HYB41256-12 Memory Organization 256K × 1-Bit Memory Capacity 262,144Bits Memory Type Dynamic RAM (DRAM) Technology NMOS Operating Mode Page Mode Access Time 120ns Supply Voltage 5VDC Operating Voltage Range 4.5VDC to 5.5VDC Package DIP-16 Address Inputs 9 Multiplexed Address Lines Input Compatibility TTL Compatible Refresh Modes Hidden Refresh, RAS-only Refresh Read / Write Modes Read, Write, Read-Modify-Write Operating Temperature 0°C to +70°C Dimensions Pinout Configuration Pin Number Pin Name Function / Description 1 A8 Address Input (Multiplexed). 2 DI Data Input. 3 WE Write Enable Input (Active Low). 4 RAS Row Address Strobe Input (Active Low). 5 A0 Address Input (Multiplexed). 6 A2 Address Input (Multiplexed). 7 A1 Address Input (Multiplexed). 8 VCC Power Supply (+5V). 9 A7 Address Input (Multiplexed). 10 A5 Address Input (Multiplexed). 11 A4 Address Input (Multiplexed). 12 A3 Address Input (Multiplexed). 13 A6 Address Input (Multiplexed). 14 DO Data Output. 15 CAS Column Address Strobe Input (Active Low). 16 VSS Ground (0V). Connection Block Diagram Applications Memory expansion for legacy computers. Embedded microprocessor systems. Industrial control equipment. Data acquisition systems. Telecommunications equipment. Test and measurement instruments. Digital controllers. Educational electronics projects. Computer repair and restoration. Electronic prototyping and development. Package Contents 1 x HYB41256-12 NMOS 256k x 1-Bit DRAM Memory IC Page Mode DIP-16 Datasheet HYB41256-12