20N120 IGBT Power Transistor 1200V 20A TO-247

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20N120 IGBT Power Transistor 1200V 20A TO-247 The 20N120 is an N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage and high-current switching applications. It features a 1200 V collector-emitter voltage rating and supports a continuous collector current of up to 40 A at 25°C and 20 A at 100°C. The device has a typical collector-emitter saturation voltage of 1.8 V at 20 A and 25°C. The device uses FS Technology and is designed with low gate charge characteristics, making it suitable for efficient power switching. It is specified for applications including general-purpose inverters, induction heating, and UPS systems. The 20N120 is available in a TO-247 package under the 20N120C marking. Features: N-channel IGBT. High-voltage switching capability. Low gate charge. FS Technology. Suitable for high-power switching applications. RoHS product. Available in TO-247 package. Specifications: Parameter Specification Device Type N-Channel IGBT Marking 20N120 Collector-Emitter Voltage (VCE) 1200 V Continuous Collector Current (IC) @ 25°C 40 A Continuous Collector Current (IC) @ 100°C 20 A Pulsed Collector Current (ICM) 60 A Gate-Emitter Voltage (VGE) ±20 V Gate Threshold Voltage 4.5–6.5 V Collector-Emitter Saturation Voltage 1.8 V. @ 20 A, 25°C Collector-Emitter Saturation Voltage @ 125°C 2.0 V. Collector-Emitter Saturation Voltage @ 150°C 2.1 V. Power Dissipation 150 W Operating / Storage Temperature -55°C to +150°C Input Capacitance (Ciss) 1600 pF. / 2400 pF max. Output Capacitance (Coss) 120 pF. / 190 pF max. Reverse Transfer Capacitance (Crss) 84 pF. / 130 pF max. Total Gate Charge (Qg) 120 nC Turn-On Delay Time 85 ns Turn-On Rise Time 180 ns Turn-Off Delay Time 360 ns Turn-Off Fall Time 100 ns Turn-On Energy 1.8 mJ Turn-Off Energy 1.1 mJ Total Switching Energy 2.9 mJ Package TO-247 Device Weight 6 g. Pinout: Pin Number Name Description 1 G Gate 2 C Collector 3 E Emitter Applications: General-purpose inverters. Induction heating (IH). UPS power supplies. High-voltage power switching. Power conversion circuits. Package Included: 1 × 20N120 IGBT Power Transistor 1200V 20A TO-247. Documents: Datasheet.