G20N60 C3 N- Channel IGBT transistor (40A, 600V) TO-247

Part number G20N60

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G20N60 C3 N- Channel IGBT transistor (40A, 600V) TO-247
Micro Ohm
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EGP 65
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G20N60 C3 N-Channel IGBT transistor 40A, 600V TO-247
Makers ElectronicsOut of stock
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EGP 75
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From Makers Electronics's description

G20N60 C3 N-Channel IGBT transistor 40A, 600V TO-247 The G20N60 C3 N-Channel Insulated Gate Bipolar Transistor (IGBT), in the TO-247 package , belongs to the UFS (Universal Fast Switching) Series. This advanced power switching device is engineered to combine the benefits of MOSFETs (high input impedance) and bipolar transistors (low on-state conduction loss). This hybrid structure results in a component with excellent static and dynamic performance suitable for various power electronics applications. The device is supplied in the robust, through-hole JEDEC Style TO-247 package, which is ideal for high-power circuits requiring efficient heat removal and mechanical stability. Features: 600V Collector to Emitter Voltage (B VCES ) rating. 40A continuous collector current at T C =25°C (based on product title). 600V Switching SOA Capability, ensuring safe operation at high voltages. Low on-state conduction loss, combining benefits of MOSFETs and Bipolar Transistors. Fast switching performance with a typical Fall Time of 108ns at T J =150°C. Integrated Short Circuit Rating, providing protection under fault conditions. Specifications: Parameter Value Collector to Emitter Voltage (B VCES ) 600V Collector Current Continuous (T C =25°C) 40A Collector Current Continuous (T C =110°C) 20A Collector Current Pulsed (I CM ) (Max) 300A Gate to Emitter Voltage Continuous (V GES ) ±20V Total Power Dissipation (P D ) (T C =25°C) 164W Collector to Emitter Saturation Voltage (V CE(SAT) ) (Max, T C =25°C) 1.8V Gate to Emitter Threshold Voltage (V GE(TH) ) (Typ) 4.8V Short Circuit Withstand Time (t sc ) (V GE =10V) 10μs Typical Fall Time (t fl ) (T J =150°C) 108ns Thermal Resistance Junction To Case (R ΘJC ) 0.76°C/W Operating and Storage Junction Temperature Range -55˜150°C Pin Configuration: Applications: AC and DC motor controls in industrial drive systems. High voltage power supplies and switch-mode power conversion stages. Driving high-power inductive loads such as solenoids, relays, and contactors. Inverter and converter circuits operating at moderate switching frequencies. Uninterruptible Power Supplies (UPS) and other power conditioning equipment. Package Include: 1x G20N60 C3 N-Channel IGBT transistor 40A, 600V TO-247 Datasheet: G20N60 C3

G20N60 C3 N- Channel IGBT transistor (40A, 600V) TO-247

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