MJE350 PNP Transistor 500mA, 300 V, 3-Pin SOT-32

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MJE350 PNP Transistor 500mA, 300V, 3-Pin SOT-32 The MJE350 is a silicon planar PNP power transistor, designed for medium‑power linear and switching applications. Packaged in a 3‑pin SOT‑32 (TO‑126) case, it offers symmetrical performance for push‑pull stages and complementary amplifier designs. Features PNP planar silicon power transistor Complementary to the MJE340 NPN device High voltage capability: 300 V collector–emitter Collector current up to 0.5 A Low saturation voltage for efficient switching Standard SOT‑32 (TO‑126) package for easy mounting Specifications Absolute Maximum Ratings (TJ = 25°C) Parameter Symbol Value Unit Collector–Base Voltage (IE = 0) VCBO 300 V Collector–Emitter Voltage (IB = 0) VCEO 300 V Emitter–Base Voltage (IC = 0) VEBO 3 V Collector Current IC 0.5 A Total Dissipation (Tc = 25°C) PTOT 20.8 W Storage Temperature Range Tstg -65 to +150 °C Operating Junction Temperature TJ -65 to +150 °C Electrical Characteristics (TJ = 25°C) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cut-off Current (IE = 0) ICBO VCB = 300 V 100 µA Emitter Cut-off Current (IC = 0) IEBO VEB = 3 V 100 µA Collector–Emitter Sustaining Voltage (IB = 0) VCE(sus) IC = 1 mA, pulse 300 V Base–Emitter On Voltage VBE(on) IC = 50 mA, VCE = 10 V 0.9 1.0 1.1 V Collector–Emitter Saturation Voltage VCE(sat) IC = 100 mA, IB = 10 mA 0.5 V DC Current Gain hFE IC = 50 mA, VCE = 10 V 30 135 240 Applications Industrial linear amplifiers Switching power supplies Complementary push‑pull output stages Motor control circuits General purpose medium‑power switching DataSheet MJE340 MJE350