MJE340 NPN BJT Transistor 300V 500mA TO-126

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MJE340 NPN BJT Transistor 300V 500mA TO-126 The MJE340 is a silicon planar NPN bipolar junction transistor designed for medium‑power linear and switching applications. It withstands high voltages (up to 300 V) while handling collector currents up to 500 mA. Packaged in a TO‑126 (SOT‑32) case, it pairs complementarily with the PNP MJE350 for push–pull stages and amplifier designs. Features High voltage capability: 300 V collector–emitter and collector–base ratings Medium current rating: 0.5 A continuous collector current Complementary pairing: Matches with MJE350 PNP transistor for push–pull designs Standard through‑hole TO‑126 package for easy PCB mounting SOT‑32 (TO‑126) package simplifies heat sinking and industrial assembly Specifications Absolute Maximum Ratings Parameter Symbol Value Unit Collector–Base Voltage VCBO 300 V Collector–Emitter Voltage VCEO 300 V Emitter–Base Voltage VEBO 3 V Continuous Collector Current IC 0.5 A Total Power Dissipation (Tc = 25 °C) PTOT 20.8 W Storage Temperature Tstg –65 to +150 °C Junction Temperature TJ –65 to +150 °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction–to–Case RθJC 6 °C/W Electrical Characteristics (T case = 25 °C unless noted) Parameter Symbol Test Conditions Min Typ Max Unit Collector cut‑off current ICBO V CB =300 V, I E =0 — — 100 µA µA Emitter cut‑off current IEBO V EB =3 V, I C =0 — — 100 µA µA Collector–Emitter sustaining voltage V CEO(sus) I C =1 mA, I B =0 300 — — V Emitter–Base on voltage V BE(on) I C =50 mA, V CE =10 V — — 1 V Collector–Emitter saturation voltage V CE(sat) I C =100 mA, I B =10 mA — — 0.5 V DC current gain h FE I C =50 mA, V CE =10 V 30 240 — — Applications Linear power supplies and regulators Audio amplifier output stages Motor control and driver circuits Industrial switching equipment High‑voltage amplifier stages DataSheet MJE340 MJE350