MPG150N10P N-Channel Power MOSFET 100V 150A TO-220

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MPG150N10P N-Channel Power MOSFET 100V 150A TO-220 The MPG150N10P uses advanced trench technology to provide excellent RDS(ON) and low gate charge. Featuring a high density cell design for lower RDSon and special process technology for high ESD capability, it offers good stability and uniformity with high EAS. The excellent package ensures good heat dissipation, making it highly reliable for a wide variety of demanding power applications. Features High Performance: VDS = 100V, ID = 150A, RDS(ON) < 6mΩ @ VGS=10V Advanced Technology: Uses advanced trench technology and high density cell design for lower Rdson Robust Protection: Special process technology for high ESD capability Avalanche Rated: Fully characterized avalanche voltage and current Highly Reliable: Good stability and uniformity with high EAS (Single pulse avalanche energy: 1200 mJ) Thermal Efficiency: Excellent package for good heat dissipation Specifications Absolute Maximum Ratings Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Pulsed IDM 720 A Maximum Power Dissipation (Tc=25℃) PD 211 W Single Pulse Avalanche Energy EAS 1200 mJ Operating Junction and Storage Temperature Range TJ, TSTG -55 To 175 ℃ Thermal Characteristics Parameter Symbol Value Unit Thermal Resistance, Junction-to-Case RθJC 0.36 ℃/W Electrical Characteristics Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA 100 – – V Zero Gate Voltage Drain Current IDSS VDS=100V, VGS=0V – – 1 μA Gate-Body Leakage Current IGSS VGS=±20V, VDS=0V – – ±100 nA On Characteristics Gate Threshold Voltage VGS(th) VDS=VGS, ID=250μA 2 3 4 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=50A – 5 6 mΩ Forward Transconductance gFS VDS=10V, ID=40A 170 – – S Dynamic Characteristics Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz – 6600 – pF Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz – 590 – pF Reverse Transfer Capacitance Crss VDS=25V, VGS=0V, f=1.0MHz – 210 – pF Switching Characteristics Turn-on Delay Time td(on) VDD=50V, ID=20A, VGS=10V, RGEN=3Ω – 29 – nS Turn-on Rise Time tr VDD=50V, ID=20A, VGS=10V, RGEN=3Ω – 23 – nS Turn-Off Delay Time td(off) VDD=50V, ID=20A, VGS=10V, RGEN=3Ω – 44 – nS Turn-Off Fall Time tf VDD=50V, ID=20A, VGS=10V, RGEN=3Ω – 15 – nS Total Gate Charge Qg VDS=50V, ID=30A, VGS=10V – 108 – nC Gate-Source Charge Qgs VDS=50V, ID=30A, VGS=10V – 29 – nC Gate-Drain Charge Qgd VDS=50V, ID=30A, VGS=10V – 40 – nC Drain-Source Diode Characteristics Diode Forward Voltage VSD VGS=0V, IS=50A – – 1.2 V Applications Power switching applications Hard switched and High frequency circuits Uninterruptible power supply (UPS) Package Content 1 x MPG150N10P N-Channel Power MOSFET 100V 150A TO-220 DataSheet MPG150N10P