25N06 TO-252 MOSFET Transistor

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Description The 25N06 is an N-channel enhancement mode power MOSFET, which provides low gate charge, avalanche rugged technology, and so on. The 25N06 is universally applied in DC-DC & DC-AC converters, motor control, high current, high speed switching, solenoid and relay drivers, regulators, audio amplifiers, automotive environment. Features Low Gate Charge RDS(on) = 0.048 Ω (TYP.) 100% Avalanche Tested Repetitive Avalanche at 100°C High Current Capability Operating Temperature: 150°C Application Oriented Characterization Specifications: PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (V GS =0) VDS 60 V Drain-Gate Voltage (R GS =20kΩ) VDGR 60 V Gate-Source Voltage VGS ± 20 V Drain Current (Continuous) T C =25°C I D 25 A T C =100°C 17 A Drain Current (Pulsed) (Note 2) IDM 100 A Single Pulse Avalanche Energy (starting T J =25°C, I D =25A, V DD =25 V) EAS 100 mJ Power Dissipation at T C =25°C (TO-252) P D 41 W Junction Temperature T J 150 °C Storage Temperature TSTG -65 ~ +150 °C 25N06 Datasheet