IRFP250 N-Channel MOSFET 200V 30A TO-247

IRFP250 N-Channel MOSFET 200V 30A TO-247

Part number IRFP250

2 offers in stock at 2 shopsEGP 55 – 60.39

EGP 55 at Makers Electronics

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IRFP250 N-Channel MOSFET 200V 30A TO-247
Makers Electronics
checked 21 days ago
EGP 55
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IRFP250 Power N-Channel MOSFET (200V, 30A)
Most Electronic
checked 11 days ago
EGP 60.39
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FromMakers ElectronicsMost Electronic

From Makers Electronics's description

IRFP250 N-Channel MOSFET 200V 30A TO-247 The IRFP250 N is a discrete N-channel MOSFET in a TO-247-3 package, built for demanding power-switching roles. Its high-voltage silicon die supports a 200 V drain-to-source rating, suitable for bridging low-voltage gate drives to high-voltage bus rails. The insulated mounting hole and metal tab facilitate efficient heat sinking, while the rugged leads ensure reliable mechanical stability in industrial power assemblies. Using advanced trench-gate technology, the IRFP250N achieves a typical on-resistance of just 0.075 Ω at a 10 V gate drive. This low resistance minimizes conduction losses under high currents (30 A continuous at 25 °C) and reduces thermal stress. Its integrated fast-recovery body diode and high dV/dt capability enable clean commutation and high switching speeds, supporting efficient energy transfer in PWM converters. Despite its high-power credentials, the IRFP250N remains easy to integrate. The standard TO-247 footprint—with clearly marked Gate, Drain, and Source pins—works with existing heatsink hardware. A 175 °C maximum junction rating offers thermal headroom, and the robust avalanche energy rating (315 mJ per pulse) protects against inductive transients without external snubbers. Features: 200 V drain-to-source voltage. 30 A continuous drain current at 25 °C (21 A at 100 °C). Low on-resistance of 0.075 Ω at 10 V gate drive. Integrated fast-recovery body diode with 186 ns recovery time. Avalanche energy rating of 315 mJ per pulse. High dV/dt capability (≥ 8.6 V/ns). Junction temperature range from –55 °C to +175 °C. Easy paralleling of multiple devices in power stages. Specifications: Parameter Value Drain-Source Voltage (V DSS): 200 V Continuous Drain Current (ID): 30 A at 25 °C; 21 A at 100 °C Pulsed Drain Current (IDM): 120 A On-Resistance (RDS(on)): 0.075 Ω at VGS = 10 V, ID = 18 A Gate Threshold Voltage (V GS(th)): 2.0–4.0 V (at IG = 250 µA) Total Gate Charge (QG): 123 nC at VDS = 50 V, ID = 18 A Reverse-Recovery Time (trr): 186 ns at IF = 18 A, VGS = 0 V Avalanche Energy (EAS): 315 mJ per pulse Thermal Resistance (RθJC): 0.7 °C/W Package: TO-247-3 Applications: Motor Drive Inverters. Switch-Mode Power Supplies. Uninterruptible Power Supplies. Induction Heating Systems. Welding Equipment. High-Frequency Converters. Package Contents: 1x IRFP250 N-Channel MOSFET TO-247 (30A-200V-0.075Ω). Documents: IRFP250 Datasheet.