2SA1106 PNP Power Transistor TO-3P

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Specification: Type Designator: 2SA1106 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 100 W Maximum Collector-Base Voltage |Vcb|: 200 V Maximum Collector-Emitter Voltage |Vce|: 140 V Maximum Emitter-Base Voltage |Veb|: 6 V Maximum Collector Current |Ic max|: 10 A Max. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 20 MHz Forward Current Transfer Ratio (hFE), MIN: 50 Package: TO-3PN 2SA1106 Datasheet