2N3791 PNP Bipolar Junction Transistor 60V 10A TO-3

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2N3791 PNP Bipolar Junction Transistor 60V 10A Type TO-3 The 2N3791 is a rugged PNP high-power silicon transistor designed for demanding power switching and linear amplification applications. It is manufactured under military-grade qualification (MIL-PRF-19500/379), making it suitable for harsh and high-reliability environments. Housed in a TO-3 metal package, it provides excellent thermal performance and high current handling capability. The device is optimized for high current gain at moderate voltages and is widely used in regulated power supplies, inverters, motor drivers, audio power stages, and industrial control circuits where stable operation and durability are required. Features: Military-grade qualified device. Designed for high-power operation. Rugged metal package. Excellent thermal dissipation. Stable DC and AC performance. High reliability for industrial use. Specifications: Parameter Value Polarity: PNP Package: TO-3 Collector-Emitter Voltage: 60 V Collector-Base Voltage: 60 V Emitter-Base Voltage: 7 V Continuous Collector Current: 10 A Base Current: 4 A Total Power Dissipation (TA = 25°C): 5 W Total Power Dissipation (TC = 100°C): 85.7 W Junction Temperature Range: −65°C to +200°C Thermal Resistance (Junction-Case): 1.17 °C/W Output Capacitance: 500 pF Pinout: Pin Name Description Pin 1 Base Control terminal Pin 2 Emitter Output terminal Applications: Linear power regulators. Audio power amplifiers. DC motor drivers. Power inverters. Battery chargers. Industrial automation systems. High-current switching circuits. Packages: 1x 2N3791 PNP Bipolar Junction Transistor 60V 10A TO-3. Documents: 2N3791 Datasheet