H11F3 High-Precision Photo FET Optocoupler IC DIP-6

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H11F3 High-Precision Photo FET Optocoupler IC DIP-6 The H11F3 High-Precision Photo FET Optocoupler IC in DIP-6 package is designed to provide reliable electrical isolation and low-distortion analog signal switching in sensitive electronic circuits. It integrates an infrared LED optically coupled to a MOSFET output, ensuring excellent linearity and minimal leakage. The device offers high isolation voltage up to5300Vrms, low ON resistance typically30Ω, and fast switching response suitable for signal frequencies up to100kHz. It operates with an input forward voltage of approximately1.2V and a recommended forward current of10mA. The compact DIP-6 package ensures easy PCB mounting and compatibility with standard through-hole designs. It is widely used in test equipment, communication systems, industrial control circuits, and audio signal routing applications where stable, noise-free isolation is required. Features High-precision Photo FET optocoupler for accurate and stable signal isolation. Integrated infrared LED and MOSFET output for efficient optical switching. High isolation voltage up to5300Vrms for enhanced circuit protection. Low ON resistance typically30Ω for improved signal integrity and reduced power loss. Low leakage current for precise analog signal control. Fast switching capability suitable for frequencies up to100kHz. Low input forward voltage around1.2V for efficient LED drive operation. Compact DIP-6 through-hole package for easy PCB integration. Excellent linearity, making it ideal for low-distortion analog applications. Reliable performance in industrial, audio, and communication systems. Pin Configuration Pin Number Pin Name Function/Description 1 ANODE Input LED Anode. 2 CATHODE Input LED Cathode. 3 N.C. No Connection. 4 OUTPUT TERMINAL Bilateral FET Output Terminal. 5 N.C. No Connection. 6 OUTPUT TERMINAL Bilateral FET Output Terminal. Dimensions NOTE All dimensions are in inches (millimeters) Specifications Parameter Value On-State Resistance (typ, I_F=16mA) 470Ω ​ Breakdown Voltage ±15V ​ Off-State Resistance (min) 300MΩ ​ Off-State Dark Current 50nA ​ Forward Voltage (typ) 1.3V – 1.75V ​ Forward Current (max) 60mA ​ Operating Temperature -55 °C to + 100 °C ​ Isolation Voltage 5300VAC (r.m.s) ​ Turn-On/Off Time (typ) 25µs ​ Package DIP-6 ​ Applications Analog signal isolation in precision measurement systems. Audio signal switching and routing circuits. Industrial control and automation interfaces. Data acquisition and instrumentation systems. Medical equipment signal isolation. Test and measurement equipment. Telecommunication signal coupling circuits. Solid-state relay replacement for low-current applications. Noise-sensitive analog switching applications. Microcontroller-to-high-voltage interface isolation. Package Contents 1 x H11F3 High-Precision Photo FET Optocoupler IC DIP-6 Datasheet H11F3