BU807 NPN Darlington Power Transistor 150V 8A TO-220
Part number BU807
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- 8 similar products, from EGP 20
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Description
BU807 NPN Darlington Power Transistor 150V 8A TO-220 The BU807 is a rugged silicon NPN Darlington power transistor designed for demanding power applications (notably horizontal deflection circuits in CRT TVs). It combines high voltage capability with low saturation characteristics and robust thermal handling. The device offers high gain (Darlington pair), low saturation voltage under heavy load, and predictable lot-to-lot performance for reliable operation. Typical uses include high-voltage switching, driver stages for coils and deflection yokes, and other applications where high collector voltages and moderate continuous currents are required. Features: • Darlington NPN power transistor. • Low saturation voltage in conduction mode. • High voltage capability for collector-base/collector-emitter stresses. • Designed for robust lot-to-lot consistency. • Good avalanche / blocking performance (suitable for inductive loads). • Available in power packages for effective heat dissipation. • Intended for horizontal deflection and other power switching roles. Specifications: Parameter | Symbol | Conditions / Notes | Value | Unit Collector–Base Voltage: | VCBO | Ta = 25°C | 330 | V Collector–Emitter Voltage: | VCEV | Ta = 25°C | 330 | V Collector–Emitter Voltage: | VCEO | Ta = 25°C | 150 | V Emitter–Base Voltage: | VEBO | Absolute maximum | 6 | V Continuous Collector Current: | IC | Ta = 25°C | 8 | A Peak Collector Current: | ICM | Pulse | 15 | A Base Current: | IB | Absolute maximum | 2 | A Collector Power Dissipation: | PC | TC = 25°C | 60 | W Junction Temperature (Max): | TJmax | — | 150 | °C Storage Temperature: | Tstg | — | -55 to +150 | °C Collector-Emitter Saturation: | VCE(sat) | IC = 5A, IB = 50mA (pulse) | 1.5 | V Base-Emitter Saturation: | VBE(sat) | IC = 5A, IB = 50mA (pulse) | 2.4 | V Collector Cutoff Current: | ICES | VCE = 330V, VBE = 0 | 0.1 | mA Emitter Cutoff Current: | IEBO | VEB = 6V, IC = 0 | 3.0 | mA C-E Diode Forward Voltage: | VECF | IF = 4A (pulse) | 2.0 | V Pinout: Pin Number | Pin Name | Description 1 | Base (B) | Control input terminal 2 | Collector (C) | High-voltage power terminal 3 | Emitter (E) | Ground/reference terminal Applications: • CRT Horizontal Deflection Output Stage. • High-Current Power Switching Circuits. • DC Motor Drive Controllers. • Relay Driver Circuits. • Solenoid Driver Circuits. • Power Amplifier Output Stage. • Industrial Control Switching. • High-Power Load Switching. • Battery-Powered Equipment Switching. • General Purpose High-Voltage DC Switching. Packages: • 1x BU807 NPN Darlington Power Transistor 150V 8A TO-220. Documents: BU807 Datasheet
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Datasheet
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